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  • American Institute of Physics (AIP)  (9)
  • 2015-2019
  • 1990-1994  (9)
  • 1993  (4)
  • 1991  (5)
  • 1
    Electronic Resource
    Electronic Resource
    Simulations of hydrogen deposition processes in a-Si:H film growth (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3295-3298 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular dynamics simulations of the deposition of atomic H on both c-Si and a-Si:H substrates are performed to understand the physical processes occurring in the presence of an atomic H flux during growth. The absorption probability, and dynamical behavior of the H are studied as a function of the incident H energy. Both hydrogen absorption and backscattering events are observed. The hydrogen reflection probability has a maximum around 50 eV and decreases at higher incident kinetic energies. In the hydrogen backscattering events a substantial subsurface penetration and energy transfer through collisions are observed. Hydrogen absorption events have been closely analyzed and a surface hydrogen release event was observed during an absorption event.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352977
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  • 2
    Electronic Resource
    Electronic Resource
    On the thermoelectric power in n-channel inversion layers of ternary chalcopyrite semiconductors under magnetic quantization (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 299-304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt is made to investigate the thermoelectric power of the electrons under strong magnetic quantization in n-channel inversion layers of ternary chalcopyrite semiconductors at low temperatures, taking n-channel inversion layers on CdGeAs2 as examples, under both the weak and strong electric field limits, respectively. We have formulated the magneto-thermo power on the basis of newly derived two-dimensional electron energy spectra for both the limits by considering various types of anisotropies of the band parameters within the frame work of k(large-closed-square)p formalism. It has been observed that, the magneto-thermo power decreases with increasing surface electric field and decreasing quantizing magnetic field in an oscillatory manner for both the limits. The crystal field parameter enhances the numerical magnitudes and the corresponding results for n-channel inversion layers of parabolic semiconductors have also been obtained as special cases from the generalized expressions under certain limiting conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350299
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  • 3
    Electronic Resource
    Electronic Resource
    On the diffusivity-mobility ratio in small-gap semiconductors in the presence of a strong magnetic field: Theory and suggestion for experimental determination (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4309-4316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons in degenerate n-type small-gap semiconductors under strong magnetic field on the basis of three-band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels, respectively. It is found, taking n-Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence due to Shubnikov–de Haas effect and decreases with increasing alloy composition. Besides the same ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well-known results of parabolic semiconductors both in the presence and absence of magnetic field have been obtained from the generalized expressions under certain limiting conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349109
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  • 4
    Electronic Resource
    Electronic Resource
    Determination of the equation of state and heat capacity of argon at high pressures from speed-of-sound data (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 94 (1991), S. 2130-2135 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A method is developed for the simultaneous determination of the equation of state and heat capacity of a gas over a wide range of pressure and temperature. This is based on stepwise construction of pT isochores starting from one experimental reference pV isotherm and using speed-of-sound data of the gas as a function of pressure and temperature. The application of the method is illustrated by computing the density and heat capacity of argon at temperatures from 148.15 to 298.15 K and at pressures from 100 to 1000 MPa. In the region of overlap, the calculated densities are found to be in good agreement with those obtained previously from direct measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459936
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  • 5
    Electronic Resource
    Electronic Resource
    Molecular dynamics simulation of a dense model bilayer of chain molecules with fixed head groups (1991)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 95 (1991), S. 5377-5386 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Molecular dynamics (MD) simulations have been performed on a model bilayer of 48 chain molecules with fixed head groups and periodic boundary conditions in the lateral direction. The effects of packing density and temperature on the extent of spatial and temporal correlations in the ensemble have been studied by analyzing the trajectories from the MD simulations. Quantities such as order parameters, number density contours, trans–gauche statistics and structure factors are evaluated as a function of distance from the plane containing the constrained head groups. The ensemble having the smallest area of 20.625 A(ring)2/molecule can be characterized as having three dimensional order, even at high temperatures, with a few gauche defects. Decreasing the packing density of the chains results in the increase of the number of gauche defects, especially at the chain extremities along with a decrease in the extent of spatial and temporal correlations. Interestingly, shorter interchain spacings are evident in the middle of the layer which can be attributed to clusters of chains lying alongside less dense domains. At temperatures lower than 300 K, the ensemble having the largest area of 26.125 A(ring)2/molecule reveals a rather complex interplay between chains wherein the lateral arrangement of the methylene units across the layer is transient and varies as a function of distance from the plane of the head groups. At temperatures higher than 300 K, thermal motion increases chain separation which effectively suppresses cluster formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.461653
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  • 6
    Electronic Resource
    Electronic Resource
    Path integral description of polymers using fractional Brownian walks (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9230-9236 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The statistical properties of fractional Brownian walks are used to construct a path integral representation of the conformations of polymers with different degrees of bond correlation. We specifically derive an expression for the distribution function of the chains' end-to-end distance, and evaluate it by several independent methods, including direct evaluation of the discrete limit of the path integral, decomposition into normal modes, and solution of a partial differential equation. The distribution function is found to be Gaussian in the spatial coordinates of the monomer positions, as in the random walk description of the chain, but the contour variables, which specify the location of the monomer along the chain backbone, now depend on an index h, the degree of correlation of the fractional Brownian walk. The special case of h=1/2 corresponds to the random walk. In constructing the normal mode picture of the chain, we conjecture the existence of a theorem regarding the zeros of the Bessel function.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.465539
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  • 7
    Electronic Resource
    Electronic Resource
    Use of methane in an electron cyclotron resonance plasma source for carbon delta-doping in GaAs molecular beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1494-1496 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron cyclotron resonance (ECR) plasma source has been used with methane gas to perform carbon delta-doping in GaAs grown by molecular beam epitaxy (MBE). The ECR plasma source is installed on a chemical vapor deposition chamber which is vacuum connected to a conventional MBE apparatus. Good surface morphologies, high sheet carrier densities (1–7×1012 cm−2), and reasonable hole mobilities (75–110 cm2/V s) are obtained.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105182
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  • 8
    Electronic Resource
    Electronic Resource
    Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV−1 cm−2 range (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2977-2979 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report significant improvements in the electrical characteristics of Si3N4/Si/GaAs capacitors with the assistance of atomic hydrogen during the in situ growth of Si on GaAs. Si3N4/Si/GaAs capacitors have shown a minimum interface state density as low as 3×1010 eV−1 cm−2 as determined by the low-frequency capacitance method. The hysteresis and frequency dispersion in the GaAs metal-insulator-semiconductor capacitor are very small (200 and 100 meV, respectively). These results represent significant advances over previous reports.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109162
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  • 9
    Electronic Resource
    Electronic Resource
    Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors with improved stability (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3291-3293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the electrical characteristics of in situ deposited Si3N4/Si/In0.53Ga0.47As depletion-mode metal-insulator-semiconductor field-effect transistors (MISFETs). MISFETs with 2.2-μm gate lengths fabricated by a self-aligned gate process exhibited extrinsic transconductances of over 200 mS/mm. The drain current drifted by only 1% during the first 10 h of operation. This small shift is attributed to the reduction of traps at the interface by a pseudomorphic Si layer, incorporated at the interface between the dielectric and the In0.53Ga0.47As channel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109075
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