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  • 1
    Electronic Resource
    Electronic Resource
    Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective-mass approach, taking into account the strain-induced splitting.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101132
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  • 2
    Electronic Resource
    Electronic Resource
    Resonant coupling of orbital angular momentum components in the barrier with analogous components in the well in InxGa1−xAs-GaAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 604-606 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When narrow InGaAs-GaAs quantum wells (QWs) are resonantly excited by the GaAs free exciton in the barrier, the intensity of the heavy-hole free exciton (HHFE) in the well oscillates with applied magnetic field. In the presence of a magnetic field, the magnetically field split angular momentum components of the GaAs barrier free exciton resonantly excite magnetically field split angular momentum components of the HHFE in the well. The angular momentum components of the HHFE in the well are expected to move in and out of resonance with the angular momentum components of the free exciton in the barrier as the magnetic field changes resulting in the observed intensity oscillations of the HHFE emission. When the QW is excited at energies slightly above the GaAs band-gap energy the HHFE emission intensity is greatly reduced and the intensity oscillations with magnetic field disappear.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111063
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  • 3
    Electronic Resource
    Electronic Resource
    Effects of In profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 540-544 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The molecular-beam-epitaxial growth of InxGa1−xAs on GaAs or AlyGa1−yAs leads to a variation of In content with depth, due to In segregation. However, by predepositing In at the beginning of InxGa1−xAs growth, and also thermally removing the excess In at the end, we can produce a layer with the ideal "square'' In profile. We find that the performance of AlyGa1−yAs/InxGa1−xAs/GaAs high electron mobility transistors is most enhanced by the predeposition step alone. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360862
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of lattice mismatch and thermal annealing on deep traps and interface states in Ga0.92In0.08As(n+)/GaAs(p) heterojunctions (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4362-4366 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the lattice-mismatch-induced defects on deep level traps in Ga0.92In0.08As(n+)/GaAs(p) heterojunction diodes have been studied by means of various deep level transient spectroscopy techniques and the frequency-dependent capacitance-voltage (C-V-f) characteristics. Three hole traps at 0.58, 0.42, and 0.27 eV were observed. We attribute the 0.42 eV trap to Cu impurity, the 0.58 eV trap to VGa or Fe, and the 0.27 eV trap to a complex associated with the 0.42 and 0.58 eV traps. Depth profiles of these hole traps in the GaAs side were measured in different lattice-mismatched samples. The depth profile data near the interface and from deep inside the bulk show evidence of impurity gettering by the mismatched interface. We also found that the concentrations of these traps were reduced by rapid thermal annealing. A U-shaped energy distribution of the interface states was obtained from the C-V-f measurements. For an in-plane mismatch greater than 0.25%, the interface state density shows no obvious dependence on the in-plane lattice mismatch, while at smaller mismatch the interface state density increases with increasing mismatch. The interface state density was on the order of 1011 cm−2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352821
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  • 5
    Electronic Resource
    Electronic Resource
    Parametric study of AlAs/GaAs superlattice double-barrier diodes (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 207-209 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum well diodes with barriers formed by thin, short-period binary AlAs/GaAs superlattices were fabricated and found to have very high peak-to-valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100132
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  • 6
    Electronic Resource
    Electronic Resource
    Er-related deep centers in GaAs doped with Er by ion implantation and molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3919-3926 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and temperature-dependent Hall effect measurements were performed on undoped, n-, and p-type GaAs doped with Er either by ion implantation or during molecular beam epitaxial (MBE) crystal growth. For light Er doping ((approximately-less-than)1017 cm−3), a hole trap was observed at 35 meV above the valence band, whereas for heavier doping ((approximately-greater-than)5×1017 cm−3), a hole trap was observed at 360 meV. Both traps were found in both ion implanted and MBE materials. The 35 meV center is attributed to the Er atom occupying the Ga site and acting as an isovalent impurity, whereas the 360 meV center is attributed to Er in an interstitial position. Furthermore, photoluminescence and DLTS measurements of Er-implanted GaAs revealed that both the Er3+ intra-4f-shell emission intensity and concentration of the deep 360 meV centers were maximized at an annealing temperature of 750 °C, and they decreased at higher temperature anneals, while the concentration of the shallow 35 meV centers increased. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358571
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanisms for GaAs surface passivation by a molecular beam epitaxial cap layer grown at 200 °C (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 5981-5984 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin, undoped, molecular beam epitaxial (MBE) GaAs cap layer grown on top of an n-type conductive layer significantly reduces the free-electron depletion from the latter. By analyzing electron transfer to surface, interface, and bulk acceptor states in the cap, as a function of cap thickness, we show that either (1) the usual EC−0.7 eV surface states are absent, (2) a dense donor near EC−0.4 eV exists or (3) a high donor interface charge (∼5×1012 cm−2) is present. Any of these conclusions constitutes an important new aspect of low-temperature MBE GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350450
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of the donor-bound light-hole free exciton in AlGaAs-GaAs quantum wells (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 439-442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The neutral donor-bound light-hole free exciton has been observed in AlxGa1−xAs-GaAs multi-quantum wells (MQWs). The transition was observed using selective excitation photoluminescence spectroscopy on two nominally 350-A(ring)-wide AlxGa1−xAs-GaAs MQW structures in the energy region between the light-hole and heavy-hole free-exciton transitions, where no other intrinsic transitions exist. The neutral donor-bound heavy-hole free-exciton transition was also observed in both MQW structures. A third 150-A(ring)-wide MQW structure which showed no evidence of a donor-bound heavy-hole free exciton also showed no evidence of a donor-bound light-hole free exciton.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345221
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  • 9
    Electronic Resource
    Electronic Resource
    Alloy scattering in p-type AlxGa1−xAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 260-266 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The hole mobility of Be-doped ( ∼ 2 × 1017 cm−3) AlxGa1−xAs, for x=0–1, is analyzed both theoretically and experimentally. Alloy scattering is very important, and in fact reduces the hole mobility from 150 to less than 90 cm2/V s at x=0.5. The main parameter in the alloy scattering formulation, the alloy potential Eal, is found to be about 0.5 eV for p-type AlxGa1−xAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350752
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical and structural study of partially relaxed Ga0.92In0.08As(p+)/ GaAs(n) diodes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1303-1309 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of in-plane lattice mismatch have been studied for Ga0.92In0.08As(p+)/GaAs(n)/GaAs(n+) diodes. Different in-plane mismatch at the p–n junction was introduced by a variation of the GaInAs layer thickness (h=0.1, 0.25, 0.5, and 1 μm). Capacitance-voltage (C-V) measurements with different frequencies show a higher-frequency dispersion for a greater lattice-mismatched sample. From the frequency dependence of the C-V curve, single-level charged interface-state density (Ns) was estimated using the effective parallel capacitance and conductance components. The average charged interface density Nss was also estimated using Voltage-intercept (Vint) method. Nss shows a linear dependence on the in-plane mismatch. The charged interface state density is approximately 2.7 Δa(parallel)/a30 for partially lattice-relaxed heterojunctions. For the 1 μm sample, the forward I-V characteristic shows quasi-Fermi level pinning effect. Admittance spectroscopy measurement gives an equilibrium Fermi energy at about Ev+0.36 eV with hole capture cross section cp=2.7×10−15 cm2 for the 1 μm sample and at Ev+0.21 eV and cp=2.4×10−16 cm2 for the 0.5 μm sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346699
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