ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons in degenerate n-type small-gap semiconductors under strong magnetic field on the basis of three-band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels, respectively. It is found, taking n-Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence due to Shubnikov–de Haas effect and decreases with increasing alloy composition. Besides the same ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well-known results of parabolic semiconductors both in the presence and absence of magnetic field have been obtained from the generalized expressions under certain limiting conditions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349109
