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  • 1
    Electronic Resource
    Electronic Resource
    Interfacial reactions in the Zr–Si system studied by in situ transmission electron microscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4982-4987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reactions in the Zr–Si system have been studied by in situ cross-section transmission electron microscopy (TEM) including high-resolution-mode energy-dispersive spectroscopy (EDS) and nanobeam electron diffraction (nanodiffraction). The as-deposited Zr film has a columnar structure and an amorphous interlayer is observed at the Zr/Si interface. The amorphous layer is found to grow during annealing at 400 °C. The growth of the amorphous layer consists of three stages: a rapid increase in the early stage, a gradual increase in the intermediate metastable stage, and saturation in the final stage. The kinetics at each stage are discussed with in situ TEM observation and ex situ EDS analysis. Annealing at 500 °C creates a ZrSi2 layer at the amorphous layer/Si interface. The phase and orientation relationship are determined from the nanodiffraction patterns. The ZrSi2 is found to grow layer by layer into the Si substrate via a ledge mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359789
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  • 2
    Electronic Resource
    Electronic Resource
    Structural comparisons of ion beam and dc magnetron sputtered spin valves by high-resolution transmission electron microscopy : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6393-6395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used high-resolution transmission electron microscopy to compare the nanostructures of ion-beam and dc magnetron sputter-deposited giant magnetoresistive (GMR) spin valves and to correlate nanostructure with magnetic properties. Very low coercivities and strong exchange bias (〈8 Oe, 125 Oe) were achieved in ion-beam-deposited spin valves of the form NiFe(50)/Co(20)/Cu((approximately-greater-than)25)/Co(20)/NiFe(50)/FeMn(150)/Ta(30 A(ring)); these were compared with typical dc magnetron deposited structures of the same kind, both with and without a Ta seed layer, which exhibited similar and poorer exchange biasing but superior GMR ratios (to 8%.) Cross-sectional and plane-view samples were prepared of all three structures and examined by high-resolution electron microscopy. Near-perfect (111)-textured fcc metal and c-axis hcp Co columnar grains were revealed in the ion beam deposited sample, while some (10°) dispersion of this texture and random grain orientations were observed in the Ta-seeded and unseeded dc magnetron sputter-deposited samples, respectively. No amount of the α-FeMn (A12) phase was observed in any of the films. Exchange bias strengths and coercivity of the top Co/NiFe/FeMn layers thus correlate strongly with the degree of (111) texture. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362009
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  • 3
    Electronic Resource
    Electronic Resource
    Structure and electrical properties of interfaces between silicon films and n+ silicon crystals (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 668-671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the morphology and electrical characteristics of the interfaces between silicon-implanted, low-pressure chemical-vapor-deposited (LPCVD) silicon films with an n+ single-crystal silicon substrate. Using high-resolution transmission electron microscopy, it is shown that the silicon implant causes a "balling up'' of the native oxide layer at the interface and epitaxial growth occurs in the LPCVD silicon film even after rapid thermal annealing at only 940 °C for 30 s. This morphological change results in a realization of a low-ohmic-resistivity LPCVD silicon/ n+ single-crystal silicon contact even at a sub-half-μm size, although the unimplanted contact becomes nonohmic. The leakage current for the implanted contact is as low as that for the unimplanted one in shallow junctions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343101
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  • 4
    Electronic Resource
    Electronic Resource
    Disordered intermixing at the platinum:silicon interface demonstrated by high-resolution cross-sectional transmission electron microscopy, Auger electron spectroscopy, and MeV ion channeling (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 689-692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metallurgical interaction at the interface between single-crystal silicon substrates and thin films of elemental platinum has been examined using the complementary techniques of high-resolution cross-sectional transmission electron microscopy (HRXTEM), Auger sputter profiling, and MeV ion channeling. We identify the existence of a 30-A(ring)-thick layer of intermixed platinum and silicon which forms at the metal-silicide interface when 50 A(ring) of Pt is electron beam evaporated onto room-temperature Si. The interfacial layer is evident in the HRXTEM as a uniform band of dark and noncrystalline contrast. In Auger sputter profiling, the evolution of the Si LVV line shape indicates the presence of a platinum silicide region adjacent to the film/Si interface but not at the surface of the Pt film. MeV ion channeling reveals that ∼1.5×1016 Si atoms/cm2 are displaced from their substrate lattice sites upon Pt deposition. In addition, the HRXTEM reveals islands of unreacted Pt and occasional grains of Pt2Si on top of the intermixed layer of Pt and Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340058
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  • 5
    Electronic Resource
    Electronic Resource
    Grain size analysis of longitudinal thin film media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5687-5689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic layer grain size plays an important role in determining the materials properties of longitudinal magnetic thin film media. Therefore, accurate and appropriate microstructural analysis is crucial to understanding the effects of changes in sputtering parameters. In this work we introduce a cumulative percentage frequency plot that is superior in representing and comparing grain size distributions. The advantages of the cumulative method are demonstrated by discussing the outcome of applying a CoCr interlayer between the magnetic layer and the underlayer. Cumulative percentage frequency plots show that a log-normal distribution fits the grain size data best. In addition, applying an interlayer was found to result in improved magnetic properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372490
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  • 6
    Electronic Resource
    Electronic Resource
    A study of the failure mechanism of a titanium nitride diffusion barrier (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3096-3103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TiN has been popularly used as a diffusion barrier between Al and Si to prevent "spiking." It has, however, been reported that spiking still occurs through TiN at temperatures higher than 500 °C. In this study, we investigated the mechanism of spiking through TiN using high resolution transmission electron microscopy and electron dispersive spectroscopy (EDS). We found TiN to be saturated with Al upon annealing at 550 °C. Si also diffuses through TiN and dissolves into Al. Spikes form upon 550 °C annealing at the Si substrate. EDS analysis revealed the phase of the spikes to be Al3Ti containing a considerable amount of Si. These results indicate that spiking through TiN is due to the formation and growth of Al3Ti after the Al saturation at the bottom of TiN. We discuss these results based on the Al–Ti–Si and Al–Ti–N ternary phase diagrams. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371173
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  • 7
    Electronic Resource
    Electronic Resource
    Interfacial reactions on annealing molybdenum-silicon multilayers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 474-480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and interfacial reaction in sputtered Mo-Si multilayers have been studied using cross-section transmission electron microscopy, electron diffraction, Rutherford backscattering, and low-angle x-ray diffraction. Low-temperature (T〈550 °C) annealing was performed in a rapid-thermal-annealing furnace and in situ in the microscope. No solid-state amorphization was observed, in spite of the presence of amorphous alloy interfacial layers in the as-deposited structure. Instead, the amorphous interlayers crystallize, and growth of the crystalline product, hexagonal-MoSi2, proceeds. The bilayer period contracts during the reaction, as the disilicide is more dense than its constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343425
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  • 8
    Electronic Resource
    Electronic Resource
    Kinetics and oxide composition for thermal oxidation of cadmium telluride (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1469-1476 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal oxidation of single-crystal p-type CdTe has been carried out in dry and wet oxygen. The thickness of the oxide varies as the square root of oxidation time, implying a diffusion controlled process. The activation energy for thermal oxidation is 1.2 eV. Examination of the oxide by Auger electron spectroscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy shows that the composition of thick layers is CdTeO3; thin layers less than 100 A(ring) thick may differ slightly in composition. An oxygen gradient is detected in as-grown thin oxides, but with storage in air at room temperature the oxygen gradient disappears. Values of chemical shift of the x-ray photoelectron spectroscopy peaks for the cadmium-tellurium-oxygen ternary system are clarified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339653
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  • 9
    Electronic Resource
    Electronic Resource
    Phase equilibria in metal-gallium-arsenic systems: Thermodynamic considerations for metallization materials (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2195-2202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a classification scheme for phase equilibria in elemental metal-gallium-arsenic systems. Using available data we assign as many metals as possible to seven generic types of ternary phase diagrams. We describe how the phase diagrams can provide a framework for interpreting previous studies of metal reactions with GaAs substrates and for identifying stable materials for GaAs metallizations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337980
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  • 10
    Electronic Resource
    Electronic Resource
    Metastable phase formation in titanium-silicon thin films (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5240-5245 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of TiSi2 thin films on silicon substrates has been investigated with several transmission electron microscope techniques. For films formed either by reacting titanium with a silicon substrate or by sintering a codeposited (Ti+Si) mixture, electron diffraction patterns show that a metastable phase—TiSi2 (C49 or ZrSi2 structure)—forms prior to the equilibrium phase—TiSi2 (C54 structure). High-resolution images indicate that the metastable TiSi2-silicon interface is atomically sharp, with no "glassy membrane'' layer present. The annealing temperature required to transform the metastable TiSi2 to the low resistivity, equilibrium TiSi2 increases as the thin-film impurity content increases. Previous studies of TiSi2 formation are discussed in light of these results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335263
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