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  • 1
    Electronic Resource
    Electronic Resource
    Amorphous phase formation and initial interfacial reactions in the platinum/GaAs system (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2036-2042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the amorphous phase formation and initial crystalline reactions at Pt/GaAs interfaces via high-resolution transmission electron microscopy (HRTEM) and in situ HRTEM. A 3-nm-thick amorphous intermixed layer consisting of three elements, platinum, gallium, and arsenic formed at the Pt/GaAs interface during the deposition of a 500-A(ring)-thick Pt film. The interlayer grew in a planar fashion in an amorphous state upon low temperature (e.g., 200 °C) annealing by a solid-state amorphization reaction. This reaction occurs with a driving force of a negative heat of mixing, and by the dominant diffusion of Pt to the GaAs substrate, which was verified by in situ HRTEM. Following the growth of the amorphous interlayer, the Pt3Ga and PtAs2 phases nucleated within the amorphous layer and grew at the Pt and GaAs sides, respectively. The relative mobility of the three constituents at the low temperature, the structure of the crystalline intermetallic compounds, and local thermodynamical equilibrium are responsible for the sequence of the crystalline phase formation. After a complete reaction at 400 °C for 20 min, we observed the formation of a layered structure of PtGa/PtAs2/GaAs as the final structure. In situ HRTEM experiments also demonstrated growth of the amorphous intermixed layer and crystalline reaction between the Pt film and the GaAs, which is consistent with the results from the ex situ annealing treatment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352347
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  • 2
    Electronic Resource
    Electronic Resource
    Structural comparisons of ion beam and dc magnetron sputtered spin valves by high-resolution transmission electron microscopy : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6393-6395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used high-resolution transmission electron microscopy to compare the nanostructures of ion-beam and dc magnetron sputter-deposited giant magnetoresistive (GMR) spin valves and to correlate nanostructure with magnetic properties. Very low coercivities and strong exchange bias (〈8 Oe, 125 Oe) were achieved in ion-beam-deposited spin valves of the form NiFe(50)/Co(20)/Cu((approximately-greater-than)25)/Co(20)/NiFe(50)/FeMn(150)/Ta(30 A(ring)); these were compared with typical dc magnetron deposited structures of the same kind, both with and without a Ta seed layer, which exhibited similar and poorer exchange biasing but superior GMR ratios (to 8%.) Cross-sectional and plane-view samples were prepared of all three structures and examined by high-resolution electron microscopy. Near-perfect (111)-textured fcc metal and c-axis hcp Co columnar grains were revealed in the ion beam deposited sample, while some (10°) dispersion of this texture and random grain orientations were observed in the Ta-seeded and unseeded dc magnetron sputter-deposited samples, respectively. No amount of the α-FeMn (A12) phase was observed in any of the films. Exchange bias strengths and coercivity of the top Co/NiFe/FeMn layers thus correlate strongly with the degree of (111) texture. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362009
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  • 3
    Electronic Resource
    Electronic Resource
    Interfacial reaction in the poly-Si/Ta2O5/TiN capacitor system (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 139-144 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For tantalum pentoxide capacitors in 1 Gbit dynamic random access memory, titanium nitride is adopted as the top electrode. After postannealing at temperatures higher than 750 °C, the capacitance of Ta2O5 reduces due to an interfacial reaction between TiN and Ta2O5. This was studied by high resolution electron microscopy and energy dispersive spectroscopy with a 1 nm electron probe. It is found that voids form along the interface between TiN and Ta2O5 and a large proportion of Ta dissolves into the TiN film. The origin of the reaction is concluded to be a large solid solubility of Ta in TiN. After Ta outdiffusion into TiN, vacancies agglomerate and form voids in Ta2O5 and thereby reduce its capacitance. Since the driving force of the reaction is the solid solubility of Ta in TiN, the amount of the reaction is affected by the thickness of the TiN films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366732
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial reactions in the Zr–Si system studied by in situ transmission electron microscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4982-4987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reactions in the Zr–Si system have been studied by in situ cross-section transmission electron microscopy (TEM) including high-resolution-mode energy-dispersive spectroscopy (EDS) and nanobeam electron diffraction (nanodiffraction). The as-deposited Zr film has a columnar structure and an amorphous interlayer is observed at the Zr/Si interface. The amorphous layer is found to grow during annealing at 400 °C. The growth of the amorphous layer consists of three stages: a rapid increase in the early stage, a gradual increase in the intermediate metastable stage, and saturation in the final stage. The kinetics at each stage are discussed with in situ TEM observation and ex situ EDS analysis. Annealing at 500 °C creates a ZrSi2 layer at the amorphous layer/Si interface. The phase and orientation relationship are determined from the nanodiffraction patterns. The ZrSi2 is found to grow layer by layer into the Si substrate via a ledge mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359789
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  • 5
    Electronic Resource
    Electronic Resource
    Interface microstructure of titanium thin-film/silicon single-crystal substrate correlated with electrical barrier heights (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 827-832 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The titanium (Ti)/single-crystal silicon (Si) interface has been examined by cross-section high-resolution transmission electron microscopy (HRTEM) combined for the first time with 2-nm-diam probe, energy-dispersive spectrometry. HRTEM shows that thin Ti-Si alloy formation always occurs at the interfaces, even in the as-deposited state. The thickness of the reacted alloy depends on the crystallinity of the Si surface, but does not depend on impurities or doping level. Crystallization of the Ti-Si alloy depends on the annealing temperature; it remains in the amorphous phase after annealing at temperatures lower than 430 °C, and the C49 TiSi2 crystal phase was observed as the first crystalline phase after annealing at 460–625 °C. The composition of the Ti-Si alloy at the Si interface is close to TiSi2, and it remains amorphous with variable composition across the alloy. It seems that the electrical barrier height is determined by the degree of crystallinity of TiSi2 at the Si interface. The barrier height for TiSi2/p-type Si interface decreases from 0.73 to 0.57 eV, accompanied by the crystallization of TiSi2 at around 460 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349641
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  • 6
    Electronic Resource
    Electronic Resource
    Interfacial reactions on annealing molybdenum-silicon multilayers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 474-480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and interfacial reaction in sputtered Mo-Si multilayers have been studied using cross-section transmission electron microscopy, electron diffraction, Rutherford backscattering, and low-angle x-ray diffraction. Low-temperature (T〈550 °C) annealing was performed in a rapid-thermal-annealing furnace and in situ in the microscope. No solid-state amorphization was observed, in spite of the presence of amorphous alloy interfacial layers in the as-deposited structure. Instead, the amorphous interlayers crystallize, and growth of the crystalline product, hexagonal-MoSi2, proceeds. The bilayer period contracts during the reaction, as the disilicide is more dense than its constituents.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343425
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  • 7
    Electronic Resource
    Electronic Resource
    Grain size analysis of longitudinal thin film media (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5687-5689 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic layer grain size plays an important role in determining the materials properties of longitudinal magnetic thin film media. Therefore, accurate and appropriate microstructural analysis is crucial to understanding the effects of changes in sputtering parameters. In this work we introduce a cumulative percentage frequency plot that is superior in representing and comparing grain size distributions. The advantages of the cumulative method are demonstrated by discussing the outcome of applying a CoCr interlayer between the magnetic layer and the underlayer. Cumulative percentage frequency plots show that a log-normal distribution fits the grain size data best. In addition, applying an interlayer was found to result in improved magnetic properties. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372490
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  • 8
    Electronic Resource
    Electronic Resource
    A study of the failure mechanism of a titanium nitride diffusion barrier (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3096-3103 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: TiN has been popularly used as a diffusion barrier between Al and Si to prevent "spiking." It has, however, been reported that spiking still occurs through TiN at temperatures higher than 500 °C. In this study, we investigated the mechanism of spiking through TiN using high resolution transmission electron microscopy and electron dispersive spectroscopy (EDS). We found TiN to be saturated with Al upon annealing at 550 °C. Si also diffuses through TiN and dissolves into Al. Spikes form upon 550 °C annealing at the Si substrate. EDS analysis revealed the phase of the spikes to be Al3Ti containing a considerable amount of Si. These results indicate that spiking through TiN is due to the formation and growth of Al3Ti after the Al saturation at the bottom of TiN. We discuss these results based on the Al–Ti–Si and Al–Ti–N ternary phase diagrams. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371173
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  • 9
    Electronic Resource
    Electronic Resource
    Amorphous Ti-Si alloy formed by interdiffusion of amorphous Si and crystalline Ti multilayers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1359-1364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactions upon rapid thermal annealing of sputtered Ti-Si multilayers have been studied by cross-section and through-foil transmission electron microscopy, glancing-angle Rutherford backscattering, and x-ray diffraction. The compositions of the samples are 40 at. % Ti, 60 at. % Si and 60 at. % Ti, 40 at. % Si, and the bilayer periodicity is about 10 nm. The silicon layers in the as-deposited films are amorphous; the titanium layers are polycrystalline hcp. After a 30-s anneal at 455 °C, significant interdiffusion occurs and we observed the formation of an amorphous Ti-Si alloy by interfacial reaction. The metastable disilicide, C49 TiSi2, nucleated along with a small amount of TiSi in the sample with higher silicon content (60%) upon annealing at 550 °C for 10 s, but the amorphous alloy remained as the only product of reaction in the 40-at. % Si sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338114
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  • 10
    Electronic Resource
    Electronic Resource
    Phase equilibria in metal-gallium-arsenic systems: Thermodynamic considerations for metallization materials (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2195-2202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a classification scheme for phase equilibria in elemental metal-gallium-arsenic systems. Using available data we assign as many metals as possible to seven generic types of ternary phase diagrams. We describe how the phase diagrams can provide a framework for interpreting previous studies of metal reactions with GaAs substrates and for identifying stable materials for GaAs metallizations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337980
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