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  • 1
    Electronic Resource
    Electronic Resource
    Solid phase crystallization of amorphous Si1−xGex films deposited on SiO2 by molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3042-3047 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated solid phase crystallization behavior of the molecular beam epitaxy grown amorphous Si1−xGex (x=0 to 0.53) alloy layers using x-ray diffractometry and transmission electron microscopy (TEM). Our results show that the thermal budget for the full crystallization of the film is significantly reduced as the Ge concentration in the film is increased. In addition, we find that a pure amorphous Si film crystallizes with a strong (111) texture while that of the Si1−xGex alloy film crystallizes with a (311) texture suggesting that the solid phase crystallization mechanism is changed by the incorporation of Ge. TEM analysis of the crystallized film shows that the grain morphology of the pure Si is an elliptical and/or a dendrite shape with a high density of microtwins in the grains while that of the Si0.47Ge0.53 alloy is more or less equiaxed shape with a much lower density of defects. From these results, we conclude that the crystallization mechanism changes from a twin-assisted growth mode to a random growth mode as the Ge concentration in the film is increased. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358654
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties and microstructural analysis of sputter-deposited and annealed Co-Pt alloys (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2641-2647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have produced Co1−xPtx (x=0.53 and 0.75) alloy films by dc magnetron sputtering at various substrate temperatures (RT-300 °C) and sputtering pressures (2–10 mTorr). The magnetic properties of the films were examined by using vibrating sample magnetometry and Kerr hysteresis loop tracer. A (111) texture is observed in the as-deposited film, and its degree is dependent on the substrate temperature and Ar pressure. The degree of the (111) texture does not affect the magnetic anisotropy. While the magnetic properties of the Co0.25Pt0.75 alloy films are not sensitive to heat treatment, the coercivity and the loop squareness of the Co0.47Pt0.53 alloy films are drastically increased by annealing. Structural analysis using transmission electron microscopy and x-ray diffractometry reveals that CoPt(L10) and CoPt3(L12) ordered phases, respectively, are formed, each with a strong (111) texture. By comparing the magnetic properties between the CoPt(L10) and CoPt3(L12) ordered phases in relation to the atomic arrangements in a unit cell, it is concluded that the perpendicular magnetic anisotropy in the sputter-deposited Co-Pt alloy system depends mainly on the atomic arrangements of the Co and Pt. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358730
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  • 3
    Electronic Resource
    Electronic Resource
    Formation of β-SiC at the interface between an epitaxial Si layer grown by rapid thermal chemical vapor deposition and a Si substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2176-2179 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of β-SiC during rapid thermal chemical vapor deposition of an epitaxial Si layer on a (100) Si substrate has been demonstrated using high-resolution cross-sectional transmission electron microscopy and secondary ion mass spectrometry (SIMS) depth profiling. Ellipsoidal β-SiC precipitates (3×10 nm2 average size) were found with a density of (6±1)×109 cm−2 along the epilayer/substrate interface. SIMS revealed about 0.2 monolayer of carbon concentrated at the interface. The precipitates were shown to form during the hydrogen prebake as a result of improper surface cleaning. The crystalline quality of the epitaxial layer, however, was unaffected by the presence of the β-SiC.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345559
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  • 4
    Electronic Resource
    Electronic Resource
    Reactively sputtered TiN as a diffusion barrier between Cu and Si (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5176-5187 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The properties of 100-nm-thick Ti55N45 and Ti45N55 films as diffusion barriers between silicon substrates and thin Cu films were studied by sheet resistance measurements, Rutherford backscattering spectrometry, Auger electron spectroscopy, secondary-ion mass spectrometry, transmission electron microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffractometry, and diode leakage current measurements. For unpatterned Si/titanium nitride/Cu samples, all the layers were intact and there was no indication of interdiffusion by conventional depth profiling techniques up to 700 °C for Ti55N45 and 900 °C for Ti45N55 after 30 s rapid thermal anneal in N2, respectively. Leakage current measurements did not show deterioration of diode junction (with junction depth of 0.25 and 0.30 μm) up to 650 °C for Ti55N45 and 800 °C for Ti45N55. The improvement in failure temperature of the N-rich Ti45N55 diffusion barrier is a result of the lower defect density and a more stable feature furnished by nitrogen stuffed at the defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347059
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  • 5
    Electronic Resource
    Electronic Resource
    A comparison of the reaction of titanium with amorphous and monocrystalline silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6255-6264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper describes investigations into the reactions occurring between Ti and monocrystalline Si (x-Si) or sputter-deposited amorphous Si (a-Si). Samples were structured so as to have the same Ti layer in contact with both crystalline and amorphous Si, and were thus ideally suited to compare the reactions in the same sample. Reactions were mainly investigated with cross-sectional transmission electron microscopy, but also with chemical characterization techniques such as Rutherford backscattering and Auger electron spectroscopy. We demonstrated that the reaction between Ti and x-Si or a-Si proceeded very similarly at low temperatures (≤450 °C). In both cases an amorphous silicide layer was observed to grow. Reaction rates were found to be nearly equal, even if some impurities were present on the x-Si surface prior to Ti deposition. One important difference was noted between the reactions, however. The reaction with a-Si was associated with Kirkendall void formation, while these voids were absent in the reaction with x-Si. We argued that the absence of voids in the case of the reaction with x-Si is due to a higher vacancy mobility in x-Si than in a-Si. At higher temperatures (500 °C), marked differences were observed in the reaction of Ti with crystalline or amorphous Si. These differences could be explained satisfactorily from thermodynamical considerations involving the heat of crystallization of a-Si. We postulated the existence of two kinetically competing pathways to go from the low-temperature configuration, where an amorphous silicide grows, to the stationary situation where diffusion-controlled growth of crystalline silicides occurs. The first one is crystallization of the amorphous silicide. The second one is the formation of a compositionally different crystalline silicide at the amorphous-silicide/x-Si interface. This postulate of kinetically competing pathways was used successfully to explain observations of amorphous and crystalline silicide growth in the Ni and Co/Si systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345141
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  • 6
    Electronic Resource
    Electronic Resource
    High spatial density nanocrystal formation using thin layer of amorphous Si0.7Ge0.3 deposited on SiO2 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2449-2453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process to make nanocrystals with an average size 〈5 nm and a spatial density 〉1012/cm2 was proposed using agglomeration and partial oxidation of thin amorphous Si0.7Ge0.3 layer deposited in between the SiO2 layers by low pressure chemical vapor deposition. The reason to use an amorphous layer is to make it possible to deposit a thin continuous layer with a thickness of less than 5 nm. Si0.7Ge0.3 alloy layer was used to control the spatial density of the nanocrystals by using selective oxidation of Si in Si0.7Ge0.3 alloy layer. The single electron memory, similar to a flash type memory device was fabricated using these Si0.7Ge0.3 nanocrystals. The Coulomb blockade effect could be clearly observed at room temperature with a threshold voltage shift of about 2.4 V, which demonstrated the formation of nanocrystals with a high spatial density. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372200
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  • 7
    Electronic Resource
    Electronic Resource
    Phase equilibria in metal-gallium-arsenic systems: Thermodynamic considerations for metallization materials (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2195-2202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose a classification scheme for phase equilibria in elemental metal-gallium-arsenic systems. Using available data we assign as many metals as possible to seven generic types of ternary phase diagrams. We describe how the phase diagrams can provide a framework for interpreting previous studies of metal reactions with GaAs substrates and for identifying stable materials for GaAs metallizations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337980
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  • 8
    Electronic Resource
    Electronic Resource
    Disordered intermixing at the platinum:silicon interface demonstrated by high-resolution cross-sectional transmission electron microscopy, Auger electron spectroscopy, and MeV ion channeling (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 689-692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The metallurgical interaction at the interface between single-crystal silicon substrates and thin films of elemental platinum has been examined using the complementary techniques of high-resolution cross-sectional transmission electron microscopy (HRXTEM), Auger sputter profiling, and MeV ion channeling. We identify the existence of a 30-A(ring)-thick layer of intermixed platinum and silicon which forms at the metal-silicide interface when 50 A(ring) of Pt is electron beam evaporated onto room-temperature Si. The interfacial layer is evident in the HRXTEM as a uniform band of dark and noncrystalline contrast. In Auger sputter profiling, the evolution of the Si LVV line shape indicates the presence of a platinum silicide region adjacent to the film/Si interface but not at the surface of the Pt film. MeV ion channeling reveals that ∼1.5×1016 Si atoms/cm2 are displaced from their substrate lattice sites upon Pt deposition. In addition, the HRXTEM reveals islands of unreacted Pt and occasional grains of Pt2Si on top of the intermixed layer of Pt and Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340058
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  • 9
    Electronic Resource
    Electronic Resource
    Optimization of Al interlayer thickness for the multilayer diffusion barrier scheme in Cu metallization (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1099-1105 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TiN(5 nm)/Al/TiN (5 nm) structure is fabricated by sequential sputtering for the diffusion barrier application against Cu diffusion. Al is used as an interlayer with an expectation that it will favor stuffing of TiN grain boundaries by reacting with O2 in the structure. In one phase of experiments, the upper TiN layer is exposed to air and preannealed in N2/O2 ambient for better stuffing. In another phase, the preannealing is not performed for the sake of reducing process steps. The Al layer thickness is varied to find out the optimized value. The diffusion barrier performance is investigated by x-ray diffraction, sheet resistance measurement, secco etching and cross sectional transmission electron microscopy after stressing the structure in temperature range of 350–700 °C at vacuum for 30 min. It is found that the barrier property is improved remarkably with the introduction of an Al layer between two TiN layers as compared to that of a single TiN layer with the same thickness. The results indicate that the barrier performance is enhanced proportionally with increasing Al thickness (from 0.5 to 2 nm) in the case that upper TiN is preannealed, showing the best result for 2 nm thick Al interlayer. On the other hand, in not preannealed upper TiN, barrier property is at its best when Al thickness is 1 nm but above this value the barrier performance deteriorates drastically. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1486039
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  • 10
    Electronic Resource
    Electronic Resource
    Fatigue-free samarium-modified bismuth titanate (Bi4−xSmxTi3O12) film capacitors having large spontaneous polarizations (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3137-3139 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/SiO2/Si(100) substrates using the method of metalorganic sol decomposition. The BSmT film capacitor with a top Pt electrode showed significantly improved values of the remanent polarization (2Pr) and the nonvolatile charge as compared to those of the Bi4−xLaxTi3O12 (x=0.75) film capacitor, recently known as the most promising candidate for nonvolatile memories. The 2Pr value of the BSmT capacitor was 49 μC/cm2 at an applied voltage of 10 V while the net nonvolatile switching charge was as high as 20 μC/cm2 and remained essentially constant up to 4.5×1010 read/write switching cycles at a frequency of 1 MHz. In addition to these, the capacitor demonstrated excellent charge–retention characteristics with its sensing margin of 17 μC/cm2 and a strong resistance against the imprinting failure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415353
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