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  • 1
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    PKDB286436 (2000)
    PANGAEA
    Details
    Publikationsdatum: 2023-03-08
    Schlagwort(e): AGE; Age, comment; Age, maximum/old; Age, minimum/young; Interpretation from literature (PKDB); Latitude of event; Longitude of event; Paleoclimate Database of the Quaternary; PKDB; PKDB286436; Precipitation, relative difference; Precipitation integrated; Temperature, air; Temperature, relative difference
    Materialart: Dataset
    Format: text/tab-separated-values, 20 data points
    Standort Signatur Erwartet Verfügbarkeit
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    DATEN PANGAEA
  • 2
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    Long-term functional maintenance of primary human hepatocytes in vitro (2019)
    American Association for the Advancement of Science (AAAS)
    In: Science
    Details
    Publikationsdatum: 2019
    Beschreibung: 〈p〉The maintenance of terminally differentiated cells, especially hepatocytes, in vitro has proven challenging. Here we demonstrated the long-term in vitro maintenance of primary human hepatocytes (PHHs) by modulating cell signaling pathways with a combination of five chemicals (5C). 5C-cultured PHHs showed global gene expression profiles and hepatocyte-specific functions resembling those of freshly isolated counterparts. Furthermore, these cells efficiently recapitulated the entire course of hepatitis B virus (HBV) infection over 4 weeks with the production of infectious viral particles and formation of HBV covalently closed circular DNA. Our study demonstrates that, with a chemical approach, functional maintenance of PHHs supports long-term HBV infection in vitro, providing an efficient platform for investigating HBV cell biology and antiviral drug screening.〈/p〉
    Print ISSN: 0036-8075
    Digitale ISSN: 1095-9203
    Thema: Biologie , Chemie und Pharmazie , Informatik , Medizin , Allgemeine Naturwissenschaft , Physik
    Publiziert von American Association for the Advancement of Science (AAAS)
    Standort Signatur Erwartet Verfügbarkeit
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    AKTUELLE ARTIKEL
  • 3
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    Test Studies of the Resistance and Seakeeping Performance of a Trimaran Planing Hull (2015)
    De Gruyter
    Details
    Publikationsdatum: 2015-01-01
    Beschreibung: Towing tank tests in calm water were performed on a trimaran planing hull to verify its navigational properties with different displacements and centres of gravity, as well as to assess the effects of air jets and bilge keels on the hull’s planing capabilities, and to increase the longitudinal stability of the hull. Hydrostatic roll tests, zero speed tests, and sea trials in the presence of regular waves were conducted to investigate the hull’s seakeeping ability. The test results indicate that the influence of the location of the centre of gravity on the hull resistance is similar to that of a normal trimaran planing hull; namely, moving the centre of gravity backward will reduce the resistance but lower the stability. Bilge keels improve the longitudinal stability but slightly affect the resistance, and the presence of air jets in the hull’s channels decreases the trim angle and increases heaving but has little effect on the resistance. Frequent small-angle rolling occurs in waves. The heaving and pitching motions peak at the encounter frequency of , and the peaks increase with velocity and move towards greater encounter frequencies. When the encounter frequency exceeds, the hull motion decreases, which leads to changes in the navigation speed and frequency.
    Print ISSN: 1233-2585
    Digitale ISSN: 2083-7429
    Thema: Technik allgemein , Wirtschaftswissenschaften
    Publiziert von De Gruyter
    Standort Signatur Erwartet Verfügbarkeit
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    AKTUELLE ARTIKEL
  • 4
    Digitale Medien
    Digitale Medien
    Facing targets sputtered Fe-N gradient films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2596-2600 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Fe-N gradient films were prepared with a facing targets sputtering system. During deposition, the nitrogen pressure increased linearly up to a value, which is called the "ultimate pressure.'' Composition profiles, microstructure, magnetic properties, and corrosion resistance of the films were investigated by various methods. The experimental results indicate that the Fe-N films possess some composition and structural gradients. The Fe concentration decreases from the substrate to the film surface from 100 to 66 at. %. The phases α‘-Fe16N2, γ'-Fe4N, ε-FexN(2〈x≤3) and ζ-Fe2N are present in the gradient films at different depths. Ms under the ultimate nitrogen pressure of 0.05 Pa has a value of 1803 emu/cc which is higher than that of bulk iron, this is attributed to the presence of Fe16N2. Increasing further the ultimate nitrogen pressure, Ms decreases monotonically. The corrosion resistance of the gradient film with higher nitrogen concentration near the surface is good enough for magnetic recording heads. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360119
    Standort Signatur Erwartet Verfügbarkeit
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    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 843-848 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence characteristics of pseudomorphic In0.19Ga0.81As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e→hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In0.19Ga0.81As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4×4 Luttinger valence band Hamiltonian, and a related strain Hamiltonian. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359009
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    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Thermal evolution of carbon in annealed Co/C soft x-ray multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1428-1436 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structures of the carbon sublayers in the annealed Co/C soft x-ray multilayers fabricated using a dual-facing-target sputtering system have been characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy (RS). The results suggest that the structural variations in the carbon layers can be roughly divided into three stages, i.e. ordering, crystalline and grain growth stages. In the ordering stage with annealing temperatures below 400 °C, the upward shift of D and G lines in Raman spectra indicates that the amorphous carbon layers are changing from ones with bond-angle disorder and fourfold-bonding only to ones containing threefold-bonding. In the crystalline stage, the amorphous carbon layers in the as-deposited multilayers crystallize to graphite crystallites in the annealing temperature range of 500–600 °C. The rapid increase in the intensity ratio of D line to G line and dramatic decrease in linewidth further confirm this substantial structural change. In the grain growth stage, the specimens are annealed at temperatures higher than 700 °C. The decrease in the intensity ratio implies a growth in the graphite crystallite dimensions, which is consistent with the XRD and TEM results. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363010
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    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Epitaxial single crystal Fe16N2 films grown by facing targets sputtering : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5440-5442 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: α″-Fe16N2 single crystal films can be prepared successfully by facing targets sputtering directly onto NaCl(100) substrates in a mixture of argon and nitrogen gases. Both x-ray diffractometer and transmission electron microscope are employed to characterize the crystal structure of the films. The perfect electron diffraction patterns of α″-Fe16N2 single crystal in [1¯11], [011], and [001] directions can be distinctly observed by double tilting. These patterns confirm that the crystal structure of the films corresponds to a body-centered tetragonal (bct) lattice with the parameters of a=b=5.72 A(ring) and c=6.29 A(ring) . The x-ray diffraction patterns show that α″-Fe16N2 epitaxially grows on the NaCl(100) substrate with an orientation relationship α″-Fe16N2(001)(parallel)NaCl(001) and α″-Fe16N2[100](parallel)NaCl[100]. The saturation magnetization of the Fe16N2 films is around 2100−2300 emu/cc, which agrees well with the value reported by Sugita et al.. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361843
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  • 8
    Digitale Medien
    Digitale Medien
    Metastable carrier concentration in GaAs/GaAlAs heterostructure under hydrostatic pressure (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2307-2310 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Different aspects of the metastable character of Si-related localized states in modulation-doped heterostructures of GaAs/GaAlAs have been studied. Hydrostatic pressure was used to change the two-dimensional electron-gas concentration at the active interface of the system. The performed studies give evidence that below a critical temperature of Tc=135 K for a given sample, at the same temperature and pressure conditions, an arbitrary carrier concentration in the quantum well can be obtained depending on the pressure at which the sample was cooled.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341134
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    Artikel (Nationallizenzen)
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  • 9
    Digitale Medien
    Digitale Medien
    Rapid removal for photoresist by a large-area electron beam (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 5180-5182 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Rapid removal of photoresist assisted by a large-area electron beam in oxygen atmosphere has been performed. The removal rate depended upon the pressure, flow rate of oxygen, and the power density of the electron beam. The maximum removal rate of 2500 nm/min for photoresist was one order of magnitude higher than that of conventional plasma processes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.338294
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  • 10
    Digitale Medien
    Digitale Medien
    Enhanced hydrogen desorption from Si sites during low-temperature Si1−xGex growth by disilane and solid-Ge molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6920-6922 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A phenomenological model is proposed to explain quantitatively the interesting compositional dependence on the Ge incorporation rate during low-temperature growth of Si1−xGex by disilane and solid-Ge molecular beam epitaxy, based on enhanced hydrogen desorption from Si sites due to the presence of Ge atoms. The hydrogen desorption rate constant for disilane on Si sites is fitted to an exponential function of Ge incorporation rate and a possible physical explanation is discussed. Simulated results are in excellent agreement with experimental data. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370106
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    Artikel (Nationallizenzen)
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