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  • 1
    Digitale Medien
    Digitale Medien
    Laser beam interference effects on the photovoltage of a p-n junction diode (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5459-5463 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photovoltage developed by a p-n junction diode illuminated by an interference pattern through a slit depends both on the distance between fringes and the phase of the interference pattern relative to the position of the slit. For a slit width which accommodates an integer number N of fringes, the voltage is independent of the phase of the pattern but this is no longer the case for a noninteger number of fringes. The maximum dependence is observed for N+1/2 fringes within the slit but the effect decreases as N increases. When the fringe distance is no longer negligible compared to the minority carrier diffusion length the dependence of the photovoltage on the number of fringes becomes more pronounced. A theory is presented which shows how the diffusion length can be obtained from the experimental data. Experiments on GaAs and Si diodes are reported. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362735
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  • 2
    Digitale Medien
    Digitale Medien
    Photoluminescence spectroscopy and the effective mass theory of strained (In,Ga)As/GaAs heterostructures grown on (112)B GaAs substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 843-848 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photoluminescence characteristics of pseudomorphic In0.19Ga0.81As/GaAs quantum well structures grown on both the conventional (001) and the unconventional (112)B GaAs substrate are investigated. It is found that the emission spectra of the structures grown on the (112)B surface exhibit some spectral characteristics not observed on similar structures grown on the (001) surface. A spectral blue shift of the e→hh1 transition with increasing optical pump intensity is observed for the quantum wells on the (112) surface. This shift is interpreted to be evidence of a strain-induced piezoelectric field. A second spectral feature located within the band gap of the In0.19Ga0.81As layer is also observed for the (112) structure; this feature is thought to be an impurity-related emission. The expected transition energies of the quantum well structures are calculated using the effective mass theory based on the 4×4 Luttinger valence band Hamiltonian, and a related strain Hamiltonian. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359009
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  • 3
    Digitale Medien
    Digitale Medien
    Strain and crystallographic orientation effects on interband optical matrix elements and band gaps of [11l ]-oriented III-V epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2447-2455 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report a derivation of the 4×4 Luttinger valence band and Bir–Pikus strain Hamiltonians valid for any [11l]-oriented epilayers. It is shown that epitaxial layers grown on substrates oriented in certain of the [11l] directions exhibit anisotropic optical transition matrix elements. This anisotropy is predicted to have its maximum for the (110) surface. For pseudomorphic epitaxial layers, calculations indicate that the zone center band gap of these structures is changed due to the effects of strain, with the largest changes occurring for those structures grown on the (111) surface. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360098
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  • 4
    Digitale Medien
    Digitale Medien
    Effective mass theory for III-V semiconductors on arbitrary (hkl) surfaces (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2029-2037 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of arbitrary substrate orientation on the electronic and optical properties of III-V zinc-blende semiconductors are considered. A unitary transformation matrix is used to rotate the 4×4 Luttinger valence band Hamiltonian, and the Bir-Pikus strain Hamiltonian from the conventional (001) surface to any arbitrary (hkl) surface of interest. The effects of strain on several electronic and optical properties are examined. It is found that the strain-induced change in the forbidden gap is largest for the (111) plane and other equivalent planes. Furthermore, the strain is also found to induce both a longitudinal and a transverse piezoelectric field. The longitudinal field reaches a maximum for the (111) surface and its other equivalent planes, while the transverse field reaches a maximum for the (110) surface and its other equivalent planes. The orientation-dependence of the hole effective masses is also examined; it is found that the (111) surface, and other equivalent planes, exhibits the largest heavy-hole mass among all possible planes. Finally, this article examines the effects of orientation on the optical transition matrix elements. For incident light with in-plane polarization vectors, the matrix elements are, in general, anisotropic—with the largest anisotropies predicted for two new surfaces: the ((square root of)310) and the (1(square root of)30) surface. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361057
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  • 5
    Digitale Medien
    Digitale Medien
    Near-field optical beam induced current measurements on heterostructures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1862-1864 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report near-field optical beam induced current (NOBIC) measurements on semiconductor quantum well (QW) structures. A subwavelength fiber tip is coupled with a tunable laser source and scanned over a sample surface. The induced photocurrent reveals the compositional profile of quantum structures. Semiconductor QW structures were designed and fabricated by molecular beam epitaxy (MBE) to study the wavelength dependence and resolution capability of NOBIC. We demonstrated that the resolution of this technique strongly depends on the aperture size. For aperture sizes that allow for coupling of evanescent fields from the tip into the semiconductor as propagating fields, the resolution strongly depends on the excitation wavelength due to the variation of the optical penetration depth. For smaller apertures, the optical field remains evanescent in the semiconductor and resolution is essentially independent of the wavelength. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.114357
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  • 6
    Digitale Medien
    Digitale Medien
    Hot-electron far-infrared intrasubband absorption and emission in quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2930-2932 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: This letter reports the experimental study of hot-electron absorption and emission of far-infrared radiation in GaAs/(Al,Ga)As quantum-well structures. The emission and absorption processes discussed here are associated with intrasubband transitions; these processes are assisted by nonequilibrium optical phonons, and by scattering at rough interfaces and at impurity sites. We show how the far-infrared emission spectra of the hot-electron gas can be used to extract the electron temperature Te. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.124637
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  • 7
    Digitale Medien
    Digitale Medien
    Structural characterization of InAs/GaAs quantum-dot nanostructures (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4133-4135 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We have performed high-resolution x-ray diffraction measurements on vertically aligned InAs/GaAs quantum-dot nanostructures. The measurements were carried out for both the symmetric (004) and asymmetric (113) and (224) Bragg reflections. Theoretical simulations of the rocking curves indicate that the x-ray signal is primarily from the pseudomorphically strained (In,Ga)As wetting layers. The average thickness and indium composition in the wetting layers, as determined from simulations of the rocking curves, were, respectively, 0.72 nm and 88%. Transmission electron microscopy studies show the creation and annihilation of quantum dots with no observable dislocations. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1382855
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  • 8
    Digitale Medien
    Digitale Medien
    Surface-emitted blue light from [112]-oriented (In,Ga)As/GaAs quantum well edge-emitting lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3321-3323 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Second-harmonic generation of surface-emitted blue light has been achieved in (In,Ga)As/GaAs quantum well edge-emitting lasers. The blue light is generated by the nonlinear interaction of the internal fundamental fields of a continuously pumped laser. These lasers exhibit room temperature threshold current densities as low as 200 A/cm2 and produce about 2.6 nW of blue light for 9.8 mW of fundamental power. The peak emission of the blue light is at 487 nm and the spectral spread is about 1.7 nm. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.117293
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  • 9
    Digitale Medien
    Digitale Medien
    Second-harmonic generation of blue light from [112]-oriented III-V antiresonant waveguide heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1754-1756 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Second-harmonic generation of blue light by the nonlinear interaction of two counter-propagating transverse electric-polarized fundamental fields in a [112]-oriented (Al,Ga)As/GaAs antiresonant waveguide is demonstrated. Theoretical calculations of the visible output power for given fundamental inputs are shown to agree with experiment. Our results show that GaAs-based materials may offer another alternative for the development of blue/green light-emitters. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116656
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  • 10
    Digitale Medien
    Digitale Medien
    Polarization rotation modulator in a strained [110]-oriented multiple quantum well (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2885-2887 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The inherent optical anisotropy of a strained [110]-oriented multiple quantum well structure is used to make an optically addressed light modulator based on polarization rotation. The anisotropy of the multiple quantum well absorption coefficient for orthogonal polarizations causes rotation of the plane of polarization of light passing through the structure. By partially bleaching the quantum well exciton, the amount of polarization rotation is changed, and therefore modulation of the amplitude of the transmitted beam is achieved. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.113462
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