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  • 1
    Electronic Resource
    Electronic Resource
    Simulation and application of the distorted ZOLZ patterns from dislocations in Si (1990)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 46 (1990), S. 103-112 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The previously reported distorted zeroth-order fringes in a bright-field Tanaka pattern from a dislocated region in silicon have been computer simulated and the experimental and the many-beam calculated patterns agree well. Calculations are carried out for nine distinct cases of edge, screw and 60° dislocations in a silicon crystal. The general usefulness of the distortion of the ZOLZ pattern in determining geometrical properties of a dislocation is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767389010275
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  • 2
    Electronic Resource
    Electronic Resource
    Structural study of undoped and doped Bi2Sr2CuO6 phases by transmission electron microscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2775-2777 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi-based superconducting phases have been studied by transmission electron microscopy. The strong one-dimensional modulations in undoped and Ce-doped monoclinic Bi2 Sr2 CuO6 (2201) samples are different from one another. We have found a new 2201 phase containing Pb and Ca with orthorhombic symmetry in nominal (Bi0.90 Pb0.10 )2 Sr2 CaCu2 O8 crystals. Its structure with space group Bbmb and two-dimensional modulation are analogous to those of the Pb-doped higher members of the structural series Bi2 Sr2 Can−1 Cun O2n+4 . Hence, this new orthorhombic rather than the monoclinic 2201 phase should be the first member of the structural series.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102371
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  • 3
    Electronic Resource
    Electronic Resource
    Dependence of crystallinity on oxygen pressure and growth mode of La0.3Sr1.7AlTaO6 thin films on different substrates (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3707-3710 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of oxygen pressure on epitaxial quality of La0.3Sr1.7AlTaO6 (LSAT) films deposited by laser ablation on SrTiO3(100), LaAlO3(100), and MgO(100) substrates has been investigated. X-ray diffraction shows only (00l) peaks in the oxygen pressure range from 10−3 to 500 mTorr. However, the crystallinity of LSAT films is found to be sensitive to oxygen pressure and dependent on substrates. LSAT films on SrTiO3 have the narrowest full width at half maximum (FWHM) of 0.05° at 300 mTorr. The films on LaAlO3 exhibit a FWHM of 0.3° at 50–100 mTorr. On MgO substrate, significant improvement of crystallinity is achieved at 200–300 mTorr, but rocking curves give an FWHM of 0.70°–1.00° due to the large lattice mismatch between LSAT and MgO. Atomic force microscopy analyses demonstrate smooth LSAT surfaces without identified grains. Reflection high-energy electron diffraction studies suggest a two-dimensional growth mode for LSAT films on SrTiO3 and LaAlO3 and a three-dimensional growth mode for LSAT films on MgO. Cross-sectional high-resolution electron micrographs indicate that LSAT films on SrTiO3 and LaAlO3 have defect-free epitaxial structure and atomically flat interfaces. An 80 Å thick intermediate layer with partially disordering is observed between LSAT films and MgO substrates. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372404
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  • 4
    Electronic Resource
    Electronic Resource
    Straight carbon nanotube Y junctions (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1879-1881 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nanotube junctions are of great interest in the fundamental research and nanoelectronic applications. Identical carbon nanotube Y junctions have been successfully synthesized by pyrolysis of methane over cobalt supported on magnesium oxide. The Y junctions have very straight arms with uniform diameters, and the angles between the three arms are close to 120°. Based on the analysis on the structure of the Y junctions the growth mechanism has been discussed. The fact that all the Y junctions grow in a similar way may be very important in the development of nanoelectronic devices. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404400
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic structure and composition of the barrier in the modified interface high-Tc Josephson junction studied by transmission electron microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2470-2472 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic structure and composition of modified interface junctions which showed reproducible critical current Ic (Ic1σ〈8% for 100 junctions) are investigated by transmission electron microscopy. Transmission electron microscopic observations show the existence of a thin barrier (1–2 nm) homogeneously covering the ion milled edge of the base YBa2Cu3Oy film although there is no barrier deposition and annealing process. High-resolution electron microscopy images and energy dispersive x-ray analysis with a spot size of 1 nm indicates that the barrier is a Ba-based perovskite-like structure, (Y1−xCux)BaOy with x〈0.5. A thin amorphous layer whose composition deviates from YBa2Cu3Oy is formed due to the preferential sputtering of Cu. The amorphous layer recrystallizes into the nonequilibrium phase (Y1−xCux)BaOy after heating up to the deposition temperature. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125051
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  • 6
    Electronic Resource
    Electronic Resource
    Boron carbide nanolumps on carbon nanotubes (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 500-502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron carbide nanolumps are formed on the surface of multiwall carbon nanotubes by a solid-state reaction between boron and carbon nanotubes. The reaction is localized so that the integrity of the structure of carbon nanotubes is maintained. Inner layers of multiwall carbon nanotubes are also bonded to boron carbide nanolumps. These multiwall carbon nanotubes with boron carbide nanolumps are expected to be the ideal reinforcing fillers for high-performance composites because of the favorable morphology. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435062
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  • 7
    Electronic Resource
    Electronic Resource
    Enhanced room-temperature magnetoresistance in partially melted La0.67Ca0.33MnO3 manganites (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 763-765 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed magnetic and transport measurements on La0.67Ca0.33MnO3 polycrystalline and partially melted samples. The magnetization and resistance decrease as sintering temperature is increased. The insulator-to-metal transition temperature is remarkably enhanced in the partially melted sample, enabling its possible applications at room temperature. The microscopic studies in melt samples show an excellent connectivity between grains, suggesting the enhancement of percolative transport by opening new conduction channels and the disappearance of magnetic phase boundary at elevated temperature by the ordering of Mn spins blocked at the grain boundary of sintered samples. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125887
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  • 8
    Electronic Resource
    Electronic Resource
    Growth of a single freestanding multiwall carbon nanotube on each nanonickel dot (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1086-1088 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Patterned growth of freestanding carbon nanotube(s) on submicron nickel dot(s) on silicon has been achieved by plasma-enhanced-hot-filament-chemical-vapor deposition (PE-HF-CVD). A thin film nickel grid was fabricated on a silicon wafer by standard microlithographic techniques, and the PE-HF-CVD was done using acetylene (C2H2) gas as the carbon source and ammonia (NH3) as a catalyst and dilution gas. Well separated, single carbon nanotubes were observed to grow on the grid. The structures had rounded base diameters of approximately 150 nm, heights ranging from 0.1 to 5 μm, and sharp pointed tips. Transmission electron microscopy cross-sectional image clearly showed that the structures are indeed hollow nanotubes. The diameter and height depend on the nickel dot size and growth time, respectively. This nanotube growth process is compatible with silicon integrated circuit processing. Using this method, devices requiring freestanding vertical carbon nanotube(s) such as scanning probe microscopy, field emission flat panel displays, etc. can be fabricated without difficulty. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124605
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  • 9
    Electronic Resource
    Electronic Resource
    Magneto-optical and high resolution electron microscopy studies of flux pinning at grain boundaries in Bi2Sr2CaCu2Ox crystals (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3680-3682 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the flux pinning behavior of Bi2Sr2CaCu2Ox multicrystalline samples using a magneto-optical flux observation method. When a magnetic field is applied parallel to the ab plane, we find low flux density regions at the intersections of small angle grain boundaries. The flux density distribution can be explained by considering both flux pinning at the small angle grain boundaries and the intrinsic pinning effect at the BiO layers. High resolution electron microscopy observations show that amorphous patches with columnar structure exist at the small angle grain boundaries (〈20°), while other defects such as misfit dislocations and distorted microstructures appear at general grain boundaries. The fact that flux pinning only occurs at small angle grain boundaries (〈20°) indicates that the columnar amorphous structures could act as flux pinning centers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114139
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  • 10
    Electronic Resource
    Electronic Resource
    Growth of c-axis in-plane YBa2Cu4O8 thin films through in situ annealing of precursors deposited by hybrid plasma sputtering (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3014-3016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Processing for the growth of YBa2Cu4O8 (Y124) thin films has been investigated by dc 94.92 MHz hybrid plasma sputtering with in situ annealing. The amorphous precursor is found to be the best candidate for growing pure Y124 phase through in situ annealing. The Raman spectrum confirms the Y124 phase by presenting the modes at 250 and 604 cm−1 related to the double Cu-O chains. X-ray diffraction as well as transmission electron microscopy further show that the films are composed of grain with orthogonal c axes in the film plane. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112493
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