Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 2470-2472
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The atomic structure and composition of modified interface junctions which showed reproducible critical current Ic (Ic1σ〈8% for 100 junctions) are investigated by transmission electron microscopy. Transmission electron microscopic observations show the existence of a thin barrier (1–2 nm) homogeneously covering the ion milled edge of the base YBa2Cu3Oy film although there is no barrier deposition and annealing process. High-resolution electron microscopy images and energy dispersive x-ray analysis with a spot size of 1 nm indicates that the barrier is a Ba-based perovskite-like structure, (Y1−xCux)BaOy with x〈0.5. A thin amorphous layer whose composition deviates from YBa2Cu3Oy is formed due to the preferential sputtering of Cu. The amorphous layer recrystallizes into the nonequilibrium phase (Y1−xCux)BaOy after heating up to the deposition temperature. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125051
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