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Simulation and application of the distorted ZOLZ patterns from dislocations in Si (1990)

Lu, G. ; Wen, J. G. ; Zhang, W. ; [et al.]

[S.l.] : International Union of Crystallography (IUCr)

Acta crystallographica 46 (1990), S. 103-112

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ISSN: 1600-5724

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Chemistry and Pharmacology , Geosciences , Physics

Notes: The previously reported distorted zeroth-order fringes in a bright-field Tanaka pattern from a dislocated region in silicon have been computer simulated and the experimental and the many-beam calculated patterns agree well. Calculations are carried out for nine distinct cases of edge, screw and 60° dislocations in a silicon crystal. The general usefulness of the distortion of the ZOLZ pattern in determining geometrical properties of a dislocation is discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1107/S0108767389010275

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