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  • 2020-2022  (56)
  • 1995-1999  (108)
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  • 1
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    Mutation of a gene encoding a protein with extracellular matrix motifs in Usher syndrome type IIa (1998)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1998-06-20
    Description: Usher syndrome type IIa (OMIM 276901), an autosomal recessive disorder characterized by moderate to severe sensorineural hearing loss and progressive retinitis pigmentosa, maps to the long arm of human chromosome 1q41 between markers AFM268ZD1 and AFM144XF2. Three biologically important mutations in Usher syndrome type IIa patients were identified in a gene (USH2A) isolated from this critical region. The USH2A gene encodes a protein with a predicted size of 171.5 kilodaltons that has laminin epidermal growth factor and fibronectin type III motifs; these motifs are most commonly observed in proteins comprising components of the basal lamina and extracellular matrixes and in cell adhesion molecules.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Eudy, J D -- Weston, M D -- Yao, S -- Hoover, D M -- Rehm, H L -- Ma-Edmonds, M -- Yan, D -- Ahmad, I -- Cheng, J J -- Ayuso, C -- Cremers, C -- Davenport, S -- Moller, C -- Talmadge, C B -- Beisel, K W -- Tamayo, M -- Morton, C C -- Swaroop, A -- Kimberling, W J -- Sumegi, J -- 5PO1 DC01813-05/DC/NIDCD NIH HHS/ -- DC03402/DC/NIDCD NIH HHS/ -- EY07003/EY/NEI NIH HHS/ -- New York, N.Y. -- Science. 1998 Jun 12;280(5370):1753-7.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Pathology and Microbiology, University of Nebraska Medical Center, Omaha, NE 68198, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/9624053" target="_blank"〉PubMed〈/a〉
    Keywords: Amino Acid Sequence ; Animals ; Cell Adhesion Molecules/chemistry ; Chromosome Mapping ; Chromosomes, Human, Pair 1 ; Cochlea/chemistry ; Epidermal Growth Factor/chemistry ; Extracellular Matrix Proteins/chemistry/*genetics/physiology ; Female ; Fibronectins/chemistry ; Frameshift Mutation ; Gene Expression ; Genes, Recessive ; Glycosylation ; Hearing Loss, Sensorineural/*genetics ; Humans ; Laminin/chemistry ; Male ; Molecular Sequence Data ; Pedigree ; Retina/chemistry ; Retinitis Pigmentosa/*genetics ; Syndrome ; Tumor Cells, Cultured
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 2
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    GPU acceleration of a model-based iterative method for Digital Breast Tomosynthesis (2020)
    Springer Nature
    Details
    Publication Date: 2020-01-08
    Electronic ISSN: 2045-2322
    Topics: Natural Sciences in General
    Published by Springer Nature
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of (Cr,Mo) Oxycarbide Films Grown on Stainless Steel via Metalloorganic Chemical Vapor Deposition (1997)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 80 (1997), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: A mixture of hexacarbonyl of chromium and molybdenum ((Cr,Mo)(CO)6) was used to deposit oxycarbide films on stainless steel at temperatures of 175°–450°C. Through the analysis of deposition kinetics in various temperature regions, the controlling mechanism was determined to be exothermic surface reactions. Activation energies of the low- and medium-temperature regions were determined to be 71.2 and −60.1 kJ/mol, respectively. Some properties including densities, composition, and crystalline phases of the films were investigated. Results revealed that the chromium content of coating products increased as the temperature increased. The dominating surface reactions switched as temperature increased, because of the increase of chromium content in the precursor gas. Hence, the coating rate and density increased to a maximum, then decreased as the coating temperature was increased to 275°C. Deposited phases were determined by X-ray diffractometry, and the relationship with film density phases has been discussed, using their microstructural textures from scanning electron microscopy micrographs. Corrosion resistance was measured by an electrochemical method. The films obtained in the low- and medium-temperature regions improved the corrosion resistance of stainless-steel substrates by a factor of 24. In addition, the latter case showed the effect of passive protection and was an optimized selection for corrosive protection. The relationship of the improvement of corrosion resistance, physical properties, and the contribution of composed phases was discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1997.tb02918.x
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of extended defects in silicon by high energy implantation of B and P (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2105-2112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extended defects induced in silicon by high energy implantation (1.5 MeV B and 2.6 MeV P) have been investigated by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements. The threading dislocations were identified to be long dislocation dipoles generated in the region of the ion projected range which grew up to the surface. The formation of threading dislocations is shown to have a strong dependence on the implantation dose and O concentration. After 900 °C annealing, a high density of threading dislocations was formed for B and P implants in a dose range of 5×1013–2×1014 cm−2 and 5×1013–3×1014 cm−2, respectively. The threading dislocation density in B-implanted Czochralski Si substrates was found to be much higher than that in B-implanted epitaxial Si substrates. This difference is attributed to the strong pinning effect of oxygen immobilizing dislocations in Czochralski substrates. Because P impurities are also efficient at pinning dislocation motion in Si, a high density of threading dislocations was observed even in epitaxial Si substrates with P implantation. Two-step annealing with a first step at 700 °C (to precipitate oxygen) and a second step at 900 °C was found to be very effective at eliminating the formation of threading dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363103
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  • 5
    Electronic Resource
    Electronic Resource
    High power operation of first and second harmonic gyrotwystrons (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 550-559 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first experimental operation of overmoded first and second harmonic gyrotwystron amplifier configurations. Both devices utilize a single cavity which is driven near 9.87 GHz in the TE011 mode, heavily attenuated drift tubes, and long tapered output waveguide sections. A magnetron injection gun produces a 460 kV, 245 A beam with a maximum average perpendicular-to-parallel velocity ratio approximately equal to one. The axial magnetic field profile is sharply tapered in the output section. Peak powers above 21 MW are achieved in 1 μs pulses with an efficiency exceeding 22% and a large signal gain near 24 dB in the first harmonic tube. The second harmonic tube achieves nearly 12 MW of the peak power with an efficiency of 11% and a gain above 21 dB. First harmonic amplifier performance is limited principally by competition from a fundamental mode output waveguide interaction; the second harmonic tube is limited by both travelling wave output modes and by a down-taper oscillation. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360639
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  • 6
    Electronic Resource
    Electronic Resource
    On the low resistance Au/Ge/Pd ohmic contact to n-GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4211-4215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361788
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  • 7
    Electronic Resource
    Electronic Resource
    Iron gettering mechanisms in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3275-3284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron implantation into silicon offers a unique system for studying the gettering mechanisms of Fe. Using deep level transient spectroscopy to monitor the remaining Fe in the gettered region and secondary-ion-mass spectroscopy to measure the concentration of Fe redistributed to the B region, we show that the gettering mechanisms can be quantitatively described. A combination of Fermi-level-induced Fe+ charge-state stabilization and Fe+–B− pairing acts to lower the free energy of Fe in p+ regions. This can lead to Fe partition coefficients as high as 106 at a p+/p interface at temperatures below ≈400 °C. The dynamic response of the system is diffusion limited during the cooling cycle. B gettering is more effective than gettering produced by Si implantation damage and more effective than trapping by a neutral impurity such as C. These mechanisms also make a large contribution to the effective gettering of Fe by p/p+ epitaxial silicon wafers. The Fermi-level/pairing gettering mechanism is also expected to operate for Cr and Mn. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363236
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  • 8
    Electronic Resource
    Electronic Resource
    Formation of amorphous interlayers by solid-state diffusion in Ti thin films on epitaxial Si–Ge layers on silicon and germanium (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6539-6542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of amorphous interlayers (a-interlayers) by solid-state diffusion in ultrahigh-vacuum-deposited polycrystalline Ti thin film on germanium and epitaxial Si1−xGex (x=0.3, 0.4, and 0.7) alloys grown on (001)Si has been investigated by transmission electron microscopy and Auger electron spectroscopy. Amorphous interlayers, less than 2 nm in thickness, were observed to form in all as-deposited samples. The growth of the a-interlayers was found to vary nonmonotonically with the composition of Si–Ge alloys in annealed samples. On the other hand, the formation temperature of crystalline phase was found to decrease with the Ge content. The results are compared with those of the Ti/Si system. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360474
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  • 9
    Electronic Resource
    Electronic Resource
    Effective mass of two-dimensional electron gas in δ-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3355-3359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the lowest two subbands of two-dimensional electron gas in δ-doped AlInAs/GaInAs quantum wells by Shubnikov–de Haas, quantum Hall effect, and cyclotron resonance measurements. The effective masses determined by the field-dependent cyclotron resonance measurements are 0.0576m0 and 0.0483m0 at electron densities of 17.3 and 3.6×1011 cm−2 for the first and second subbands, respectively. It was found that the electron in the first subband has heavier effective mass and shorter quantum lifetime than that in the second subband. Using the band gap of 810 meV and the band-edge mass of 0.042m0 for Ga0.47In0.53As, we calculated the average distance of the two subbands from the conduction band edge to be 150 and 61 meV, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363247
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  • 10
    Electronic Resource
    Electronic Resource
    Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4216-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the ohmic contact formation mechanism of the low resistance (∼1×10−6 Ω cm2) Au/Ge/Pd contact to n-GaAs annealed at 175 °C. Cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry were utilized in this study. It is found that the solid phase regrowth process, interdiffusion between Au and Ge, and the enhancement of the conductivity of the excess Ge layer are responsible for the observed low contact resistivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361789
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