ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Toxic Gases in Silage, Mass Spectrometric Study of Nitrogenous Gases Produced by Silage (1960)
    s.l. : American Chemical Society
    Journal of agricultural and food chemistry 8 (1960), S. 239-242 
    Details
    ISSN: 1520-5118
    Source: ACS Legacy Archives
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jf60109a023
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Calorimetric and spectroscopic studies of lipid thermotropic phase behavior in liver inner mitochondrial membranes from a mammalian hibernator (1988)
    s.l. : American Chemical Society
    Biochemistry 27 (1988), S. 4632-4638 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00413a008
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Field-induced surface chemistry of NO (1990)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 6065-6069 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A microscopic theory of field adsorption is used to study the adsorption and reaction of NO on a Pt(111) surface in high electrostatic fields. We find that below 0.4 V/A(ring) only NO is adsorbed stably. Above this value dissociation sets in that leads around 1.2 V/A(ring) to the formation of N2O. A molecular orbital analysis is given of the reaction pathway and to identify the stabilization mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.459494
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    A Pilot-Plant Study of Continuous Ultrasonic Extraction of Soybean Protein (1982)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 47 (1982), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Methods were studied to extract soybean proteins from commercial defatted flakes with ultrasonic energy, continuously and efficiently, in a pilot plant. Studies also included batchwise sonication of aqueous soybean slurries in a tank. Parameters investigated included soybean-to-solvent ratios of 1:10, 1:20, and 1:30; solvents of tap water and 0.1N NaOH; and extraction with and without sonication. Protein yield and energy requirements for extraction were measured to correlate the operating condition with the extent of protein extraction. For a residence time of 0.7 sec in the continuous sonication process, the extracted protein yield was greatest at 1:30 soy-to-alkaline solvent ratio. Energy input to produce protein isolate is the least at 1:10 soy-to-alkaline solvent. Although the continuous sonication procedure is workable, the commercial operation remains to be tested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1982.tb07632.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    ULTRASONIC PEPTIZATION OF SOYBEAN PROTEINS FROM AUTOCLAVED FLAKES, ALCOHOL-WASHED FLAKES AND COMMERCIAL SAMPLES (1978)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 43 (1978), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: An ultrasonic method to peptize soybean proteins from defatted, autoclaved and alcohol-washed flakes and commercial concentrates and isolates was studied. Extraction conditions were optimized by examining factors including sonic power, meal-to-water ratio, salt concentration, pH and sonic time. The present study reaffirmed the fact that sonication can disperse 80% of total proteins from autocalved flakes with one extraction. Also, this method solublilized over 90% of the proteins from alcohol-washed flakes. Results from commercial concentrates and isolates varied. The low solubility of autoclaved commcrcial concentrates is likely due to high acidity rather than the inability to disperse proteins in water by ultrasound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1978.tb15296.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    On the low resistance Au/Ge/Pd ohmic contact to n-GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4211-4215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361788
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4216-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the ohmic contact formation mechanism of the low resistance (∼1×10−6 Ω cm2) Au/Ge/Pd contact to n-GaAs annealed at 175 °C. Cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry were utilized in this study. It is found that the solid phase regrowth process, interdiffusion between Au and Ge, and the enhancement of the conductivity of the excess Ge layer are responsible for the observed low contact resistivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361789
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonspiking (nonalloyed) Ge/Pd ohmic contact formed via solid phase reaction on an AlGaAs/GaAs high electron mobility transistor (HEMT) was investigated. The surface morphology of the Ge/Pd contact is smooth and planar with a typical contact resistivity of about 3×10−7 Ω cm2. The current-voltage characteristics of the HEMTs with the Ge/Pd contacts are similar to those with the conventional AuGe/Ni spiking (alloyed) contacts. Since only a thin substrate surface layer of 100–200 A(ring) was reacted with the Ge/Pd contact, we can conclude that ohmic contacts can be made to the two-dimensional electron gas without deep penetration of the metallization. This observation is in agreement with the concept that transport due to tunneling is significant across heterojunctions. The Ge/Pd contact may be potentially useful in HEMT integrated circuit technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101032
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Shallow Si/Pd-based ohmic contacts to n-Al0.5In0.5P (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3640-3644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Pd-based contact schemes based on the solid-phase regrowth (SPR) process have been developed to form low-resistance ohmic contacts to n-Al0.5In0.5P (Eg=2.3 eV) with a minimum contact resistivity of about 6×10−6 Ω cm2. The SPR process responsible for the ohmic contact formation was verified using cross-sectional transmission electron microscopy. The contact resistivity of the Si/Pd-based contacts remained in the range of 2–3×10−5 Ω cm2 after aging at 400 °C for 25 h. Furthermore, a lateral modulation disordering phenomenon as a result of the SPR process in the regrown AlInP layer has been observed. These ohmic contacts may be useful in some novel Al0.5In0.5P-related device fabrication schemes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361191
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Low resistance Pd/Zn/Pd ohmic contact to p-In0.82Ga0.18As0.39P0.61 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2720-2724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the investigation of a low resistance Pd/Zn/Pd contact to p-InGaAsP (λ=1.14 μm). The contact had a minimum contact resistivity of ∼3×10−7 Ω cm2 to the substrate doped to 2×1018 cm−3. The samples showed rather uniform surface and interfacial morphologies. X-ray studies showed the formation of a PdZn phase for samples annealed below 400 °C and this phase started to decompose at temperatures higher than 400 °C. Pd-III compounds (Pd2Ga5 and PdIn3) also started to form for annealing temperatures higher than 400 °C. The ohmic behavior can be understood in terms of the decomposition of the PdZn phase and the formation of Pd-III compounds for samples annealed at 400 °C or higher. The thermal stability of this contact at 400 °C was found to be stable, which is important for device applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363974
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...