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  • 1
    Electronic Resource
    Electronic Resource
    The Si/Pd ohmic contact to n-GaP based on the solid phase regrowth principle (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3138-3142 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Si/Pd ohmic contact scheme to n-GaP (n∼5×1017 cm−3) was investigated using Rutherford backscattering spectrometry, transmission electron microscopy, energy dispersive x-ray spectrometry, and the Cox–Strack measurement. Contact resistivities of ∼2×10−4Ω cm2 are obtained for annealing temperatures ranging from 350 to 650 °C. This contact is thermally stable at 550 °C. The ohmic contact formation mechanism is rationalized in terms of the solid phase regrowth of an n+ layer and the solid phase epitaxy of a Si layer. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364320
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  • 2
    Electronic Resource
    Electronic Resource
    Low resistance Pd/Zn/Pd ohmic contact to p-In0.82Ga0.18As0.39P0.61 (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2720-2724 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the investigation of a low resistance Pd/Zn/Pd contact to p-InGaAsP (λ=1.14 μm). The contact had a minimum contact resistivity of ∼3×10−7 Ω cm2 to the substrate doped to 2×1018 cm−3. The samples showed rather uniform surface and interfacial morphologies. X-ray studies showed the formation of a PdZn phase for samples annealed below 400 °C and this phase started to decompose at temperatures higher than 400 °C. Pd-III compounds (Pd2Ga5 and PdIn3) also started to form for annealing temperatures higher than 400 °C. The ohmic behavior can be understood in terms of the decomposition of the PdZn phase and the formation of Pd-III compounds for samples annealed at 400 °C or higher. The thermal stability of this contact at 400 °C was found to be stable, which is important for device applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363974
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  • 3
    Electronic Resource
    Electronic Resource
    Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4216-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the ohmic contact formation mechanism of the low resistance (∼1×10−6 Ω cm2) Au/Ge/Pd contact to n-GaAs annealed at 175 °C. Cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry were utilized in this study. It is found that the solid phase regrowth process, interdiffusion between Au and Ge, and the enhancement of the conductivity of the excess Ge layer are responsible for the observed low contact resistivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361789
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  • 4
    Electronic Resource
    Electronic Resource
    Phonon mode study of Si nanocrystals using micro-Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6705-6708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films show unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm. Two size-dependent spectral regions, one with the stronger intensity peaking at 505–509 cm−1 and another a shoulder-like band between 512 and 517 cm−1, are clearly identified using a detailed line-shape analysis and the strong phonon confinement model. The strong size dependence of the relative integrated intensities of the two bands suggests that the modification of the vibrational spectra can be attributed to an effect induced by the atomic vibrations from the near-surface region of the nanocrystals. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360494
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  • 5
    Electronic Resource
    Electronic Resource
    Degradation mechanism of the nonspiking ohmic contacts formed by solid-phase regrowth process on n-GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1607-1610 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of the Ge/Pd and the Pd-In-Ge ohmic contacts on n-GaAs formed by the solid-phase regrowth process has been investigated. It was found that degradation of these contacts at elevated temperatures cannot be rationalized by a single degradation process. The degradation at different temperatures can be best described by two processes: (a) a diffusion-controlled process and (b) a reaction-controlled process. The experimental results show that the thermal stability of the contacts can be improved by SiNx capping layers when the reaction-controlled process is the most significant process; however, SiNx capping layers cannot improve their thermal stability if the diffusion-controlled process is the dominant degradation process at elevated temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358914
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  • 6
    Electronic Resource
    Electronic Resource
    On the low resistance Au/Ge/Pd ohmic contact to n-GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4211-4215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361788
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  • 7
    Electronic Resource
    Electronic Resource
    Shallow Si/Pd-based ohmic contacts to n-Al0.5In0.5P (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3640-3644 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si/Pd-based contact schemes based on the solid-phase regrowth (SPR) process have been developed to form low-resistance ohmic contacts to n-Al0.5In0.5P (Eg=2.3 eV) with a minimum contact resistivity of about 6×10−6 Ω cm2. The SPR process responsible for the ohmic contact formation was verified using cross-sectional transmission electron microscopy. The contact resistivity of the Si/Pd-based contacts remained in the range of 2–3×10−5 Ω cm2 after aging at 400 °C for 25 h. Furthermore, a lateral modulation disordering phenomenon as a result of the SPR process in the regrown AlInP layer has been observed. These ohmic contacts may be useful in some novel Al0.5In0.5P-related device fabrication schemes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361191
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  • 8
    Electronic Resource
    Electronic Resource
    Defect-assisted ohmic contacts on p-InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2056-2060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-element contacts, Pd or Ni, on various p-InP substrates grown by liquid-encapsulation Czochralski (LEC) and by metal-organic chemical vapor deposition were investigated. Pd or Ni contacts on the substrates supplied by one certain manufacturer were found to be ohmic with a minimum contact resistivity of ∼5×10−5 Ω cm2 after annealing between 420 and 500 °C. However, ohmic behavior was not observed for these contacts on other substrates. Hall measurement, double-crystal x-ray diffractometry, and photoluminescence technique were used to evaluate the substrates. It was speculated that existence of intrinsic defects, such as P vacancies and other possible defects, in p-InP grown by LEC method may be responsible for the observed difference in ohmic behavior. A defect-assisted tunneling mechanism is proposed to account for the observed ohmic behavior of single-element contacts on certain p-InP substrates. This approach is potentially useful for making ohmic contacts to other compound semiconductors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358845
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  • 9
    Electronic Resource
    Electronic Resource
    The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 1621-1625 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the contact resistance of the Ge/Pd and Si/Pd metalization scheme on n-GaAs was investigated. These two contact systems are based on solid-phase reactions, thus leading to nonspiking ohmic contacts to n-GaAs. The experimental results show that the ohmic behavior is likely due to both a highly doped surface n+ region and/or a small barrier at the interface. The origin of this small barrier and nonlinear current-voltage characteristics for certain samples are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342954
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  • 10
    Electronic Resource
    Electronic Resource
    Microstructure and magnetoelastic properties of FeCo/Ag multilayers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7511-7513 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is growing evidence that in magnetic films of thickness less than 20 nm there can be significant change in the values of magnetic anisotropy constant and magnetoelastic coupling from those of bulk materials. While phenomenological models based on Néel's idea of surface anisotropy may offer a partial explanation, it is vital to develop a more mechanistic understanding. Recently the potential contribution of interface and surface strains to the observed property change has been highlighted. Here we report the field emission gun TEM and electron spectroscopic images of the structure of the interface region between Fe50Co50 and Ag, the local crystallographic texture and the distribution of Ag in magnetostrictive Fe50Co50/Ag multilayers. The results are correlated with the bulk measurements of coercivity and the saturation magnetostriction constant. For the first time it is possible to provide a degree of microstructural interpretation of the magnetic data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1354591
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