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  • 1
    Electronic Resource
    Electronic Resource
    Formation of extended defects in silicon by high energy implantation of B and P (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2105-2112 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extended defects induced in silicon by high energy implantation (1.5 MeV B and 2.6 MeV P) have been investigated by plan-view and cross-sectional transmission electron microscopy studies and defect etching measurements. The threading dislocations were identified to be long dislocation dipoles generated in the region of the ion projected range which grew up to the surface. The formation of threading dislocations is shown to have a strong dependence on the implantation dose and O concentration. After 900 °C annealing, a high density of threading dislocations was formed for B and P implants in a dose range of 5×1013–2×1014 cm−2 and 5×1013–3×1014 cm−2, respectively. The threading dislocation density in B-implanted Czochralski Si substrates was found to be much higher than that in B-implanted epitaxial Si substrates. This difference is attributed to the strong pinning effect of oxygen immobilizing dislocations in Czochralski substrates. Because P impurities are also efficient at pinning dislocation motion in Si, a high density of threading dislocations was observed even in epitaxial Si substrates with P implantation. Two-step annealing with a first step at 700 °C (to precipitate oxygen) and a second step at 900 °C was found to be very effective at eliminating the formation of threading dislocations. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363103
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  • 2
    Electronic Resource
    Electronic Resource
    Plasma enhanced chemical vapor deposition of titanium nitride thin films using cyclopentadienyl cycloheptatrienyl titanium (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4377-4382 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of a low oxidation state Ti compound, cyclopentadienyl cycloheptatrienyl titanium, (C5H5) Ti(C7H7) (CPCHT), as a potential source for TiN and Ti in plasma enhanced chemical vapor deposition processes has been investigated. This precursor provides us with a new chemical vapor deposition route to TiN films that offer an interesting contrast to films deposited from Ti(IV) precursors. Film depositions were carried out by introducing CPCHT, with H2 carrier gas, into the downstream region of a NH3, N2, H2, or mixed H2/N2 plasma. Low resistivity (100–250 μΩ cm) nitrogen-rich TiN films with little carbon or oxygen incorporation and good conformality were deposited with activated N2 or NH3 at deposition temperatures of 300–600 °C, inclusive. Mixed H2/N2 plasmas resulted in more stoichiometric TiN films with similar properties. The most striking feature of these films is the absence of columnar grain growth, in contrast to TiN films deposited using TiCl4 or Ti(NR2)4. Although the film texture was influenced by the plasma gas, the average grain size of the films deposited using activated N2 and NH3 was similar. The TiN films that we deposited were effective diffusion barriers between aluminum and silicon up to 575 °C. Depositions using activated H2 resulted in films with significantly less carbon than CPCHT, but still having a minimum of 2.7:1 C:Ti. The lower oxidation state of the precursor did not facilitate the deposition of a Ti-rich film. No depositions were observed with any of the reactant gases in the absence of plasma activation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357327
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  • 3
    Electronic Resource
    Electronic Resource
    Iron gettering mechanisms in silicon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3275-3284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron implantation into silicon offers a unique system for studying the gettering mechanisms of Fe. Using deep level transient spectroscopy to monitor the remaining Fe in the gettered region and secondary-ion-mass spectroscopy to measure the concentration of Fe redistributed to the B region, we show that the gettering mechanisms can be quantitatively described. A combination of Fermi-level-induced Fe+ charge-state stabilization and Fe+–B− pairing acts to lower the free energy of Fe in p+ regions. This can lead to Fe partition coefficients as high as 106 at a p+/p interface at temperatures below ≈400 °C. The dynamic response of the system is diffusion limited during the cooling cycle. B gettering is more effective than gettering produced by Si implantation damage and more effective than trapping by a neutral impurity such as C. These mechanisms also make a large contribution to the effective gettering of Fe by p/p+ epitaxial silicon wafers. The Fermi-level/pairing gettering mechanism is also expected to operate for Cr and Mn. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363236
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  • 4
    Electronic Resource
    Electronic Resource
    Interfacial and surface energetics of CoSi2 (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5190-5194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energetics of the CoSi2-Si interface and the CoSi2 surface have been investigated by analyzing the equilibrium shapes of isolated silicide precipitates. CoSi2 precipitates grown by heating 2 A(ring) of Co on a clean, reconstructed Si{100} surface formed with a number of orientations that remained stable upon annealing to high temperatures. Precipitates buried by a Si capping layer were shown to form along {111} and {100} interfaces. A ratio of the CoSi2-Si interfacial free energies has been measured from the shapes of a large number of buried precipitates indicating that γ{100}/γ{111}=1.43±0.07. It is suggested that the shape of CoSi2 equilibrated within vacuum consists of {111}, {100}, and {110} facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357237
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  • 5
    Electronic Resource
    Electronic Resource
    Semiconductor molecular-beam epitaxy at low temperatures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3597-3617 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature molecular-beam epitaxy (MBE) in semiconductors is reviewed, with a focus on limited thickness epitaxy (LTE), the regime where crystalline growth over an epitaxial thickness hepi is followed by a transition to amorphous deposition. The goal is to summarize the main results on this phenomenon, make the connection to other results on low-temperature MBE, and present the large body of unpublished data on hepi. Since the problem is still not fully understood, all available data that have a bearing on the understanding of the effect are outlined. The scientific questions and practical problems that have driven interest in low-temperature growth are outlined, and the phenomenon of LTE and the dependence of hepi on the growth conditions are described. The LTE effect is apparently general, but Si(100) is the model system for which most data are available. Breakdown of epitaxy follows a universal curve that is inconsistent with continuous nucleation of the amorphous phase, implying that growth is truly thickness dependent. The epitaxial thickness is thermally activated in substrate temperature T as hepi=h0 exp(−Eact/kBT), with h0 following a weak ln(R) or R1/4 dependence on deposition rate R. hepi is also strongly influenced by lattice mismatch strain, residual H in the ultrahigh vacuum, and annealing during growth interrupts. Possible mechanisms for LTE are discussed, with particular emphasis on the roles played by H and kinetic roughening, and the key experiments distinguishing these mechanisms are described. Finally, an attempt is made to draw up the best current picture of the phenomenon. It is concluded that roughening provides the fundamental limit to epitaxy at low temperature, but with H contamination playing an important part in controlling surface diffusion: outstanding problems include the rate dependence and the details of the roughening behavior. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358597
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of as-implanted damage on the microstructure of threading dislocations in MeV implanted silicon (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1221-1225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dose dependence of as-implanted damage and the density of threading dislocations formed after MeV implants into Si is measured. The role of the damage and amorphization in the evolution of dislocation microstructure is assessed. As-implanted damage is analyzed by Rutherford backscattering spectroscopy and channeling. Defect etching is used to delineate threading dislocations in near-surface regions of annealed (900 °C, 30 min) samples. For a variety of implants with 1.1 μm projected range (600 keV B, 1 MeV P, and 2 MeV As) we observe a sharp onset for formation of threading dislocations with a peak in dislocation density at a dose of about 1×1014 cm−2, this dose depends on the ion mass. With a further increase in dose, the dislocation density decreases. This decrease, however, is drastically different for the different ions: sharp (4–5 orders of magnitude) reduction for P and As implants and slow decline for B implant. The sharp decrease in the density of threading dislocations at higher doses is correlated with the onset of amorphization observed by channeling for P and As implants. Our data for low-temperature implants provide conclusive proof that a reduction in the dislocation density for P and As implants is a result of amorphization. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370874
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  • 7
    Electronic Resource
    Electronic Resource
    The crystallography and defect chemistry of structural faults in lithium niobate (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5295-5301 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscope studies of Ti-doped, congruent lithium niobate (LiNbO3) have shown that extended structural faults and domain boundaries are only present within the Ti-diffused layer (i.e., the waveguiding region). Structural faults have also been observed in undoped Li-deficient LiNbO3, though not in undoped control crystals of congruent and stoichiometric LiNbO3. In both Ti-doped and Li-deficient LiNbO3, crystal chemistry predicts an increase in the concentration of the point defects V'''''Nb and Nb⋅⋅⋅⋅Li. Therefore, it appears that the coalescence of these defects is responsible for the creation of structural faults. Since the extent of these structural faults and domain boundaries is tens of microns, they are clearly potential scattering sites for photons. In this regard, a systematic understanding of their origin and thermal stability is crucial to integrated optical device technologies based on LiNbO3 and on the Ti-doped waveguide fabrication technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340393
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of H on Si molecular-beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6615-6618 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In Si crystal growth by molecular-beam epitaxy (MBE) at low temperatures there is known to be an epitaxial thickness: an initially crystalline regime before the deposited film becomes amorphous. The predominant impurity in MBE is hydrogen, but the role of background H in low-temperature MBE has not previously been assessed. Here the effect of deliberate dosing of the Si surface with atomic H during low-T growth is studied. The epitaxial thickness is shown to be sensitive to very small additional H fluxes (≈10−9 Torr, i.e., an increase in H only marginally above ambient). With further increases in dose rate, the epitaxial thickness decreases as hepi=h0−k(ln PH). Using secondary-ion-mass spectrometry data on the segregated H at the interface, we argue that breakdown in epitaxy is not caused directly by the surface concentration of adsorbed impurities. It is deduced that very small concentrations of H may influence the Si surface diffusion rate. The possible effect of background H adsorption on previous experiments on Si steps and surface diffusion is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355101
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  • 9
    Electronic Resource
    Electronic Resource
    Interfacial defects in silicides on Si(100): "Coreless defects,'' 1/12〈111〉 dislocations, and twinning mechanisms (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4064-4066 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: "Coreless defects'' are one of the long-standing surprises of silicide epitaxy on Si. For symmetry reasons a NiSi2 or CoSi2 film cannot grow over a step on Si(100), but must incorporate a dislocation; apparently, however, very thin films avoided this dislocation by introducing a trench through the silicide, the coreless defect. Here we use high-resolution microscopy, electron diffraction and dark-field imaging to show that these defects are in fact microtwins ≈4 atomic planes thick. The twins are highly unusual in that they follow curved lines, apparently dictated by steps at the interface. A mechanism for the formation of these curved twin defects by repeated formation of a 1/12〈111〉 interfacial partial at steps is postulated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352829
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  • 10
    Electronic Resource
    Electronic Resource
    The electrical and defect properties of erbium-implanted silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2667-2671 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of the electrical and defect properties of ion-implanted erbium in silicon shows that erbium doping introduces donor states. The concentration of erbium related donors as a function of implant dose saturates at 4×1016 cm−3 at a peak implanted Er-ion concentration of (4–7)×1017 cm−3. The defect levels related to erbium in silicon are characterized by deep level transient spectroscopy and identified as E(0.09), E(0.06), E(0.14), E(0.18), E(0.27), E(0.31), E(0.32), and E(0.48). The dependence of the photoluminescence on annealing temperature for float zone and for Czochralski-grown silicon show that oxygen and lattice defects can enhance the luminescence at 1.54 μm from the erbium. Temperature-dependent capacitance-voltage profiling shows donor emission steps when the Fermi level crosses EC − ET = 0.06 eV and EC − ET = 0.16 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349381
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