Publication Date:
2015-09-03
Description:
In this work, the tetragonal-phase BaTiO 3 high dielectric (HK) layer and the magnetic FePt metal gate (MG) film are proposed to be the gate stack scheme on the Ge three dimensional (3D) n-type multi-gate-field-effect transistors (FETs). The ∼75% dielectric constant (κ-value) improvement, ∼100× gate leakage (J g ) reduction, and ∼70% on-state current (I on ) enhancement are achieved due to the colossal magneto-capacitance effect. The magnetic field from the magnetic FePt MG film couples and triggers more dipoles in the BaTiO 3 HK layer and then results in the super gate stack characteristics. The promising transistor's performance (∼200 μ A/ μ m on the device with the gate length L ch = 60 nm) on the high mobility (Ge) material in the 3D n-type multi-gate-FETs device structure demonstrated in this work provides the useful solution for the future advanced logic device design.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
