Publication Date:
2019-07-13
Description:
Hydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.
Keywords:
INSTRUMENTATION AND PHOTOGRAPHY
Type:
NASA-TM-107064
,
NAS 1.15:107064
,
AIAA PAPER 95-2647
,
E-9925
,
Joint Propulsion Conference and Exhibit; Jul 10, 1995 - Jul 12, 1995; San Diego, CA; United States
Format:
application/pdf
