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Silicon Carbide-Based Hydrogen and Hydrocarbon Gas DetectionHydrogen and hydrocarbon detection in aeronautical applications is important for reasons of safety and emissions control. The use of silicon carbide as a semiconductor in a metal-semiconductor or metal-insulator-semiconductor structure opens opportunities to measure hydrogen and hydrocarbons in high temperature environments beyond the capabilities of silicon-based devices. The purpose of this paper is to explore the response and stability of Pd-SiC Schottky diodes as gas sensors in the temperature range from 100 to 400 C. The effect of heat treating on the diode properties as measured at 100 C is explored. Subsequent operation at 400 C demonstrates the diodes' sensitivity to hydrogen and hydrocarbons. It is concluded that the Pd-SiC Schottky diode has potential as a hydrogen and hydrocarbon sensor over a wide range of temperatures but further studies are necessary to determine the diodes' long term stability.
Document ID
19960001693
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Hunter, Gary W. (NASA Lewis Research Center Cleveland, OH, United States)
Neudeck, Philip G. (NASA Lewis Research Center Cleveland, OH, United States)
Chen, Liang-Yu (NASA Lewis Research Center Cleveland, OH, United States)
Knight, D. (Cortez 3 Services Corp. Brook Park, OH., United States)
Liu, C. C. (Case Western Reserve Univ. Cleveland, OH., United States)
Wu, Q. H.R (Case Western Reserve Univ. Cleveland, OH., United States)
Date Acquired
September 6, 2013
Publication Date
October 1, 1995
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-TM-107064
NAS 1.15:107064
AIAA PAPER 95-2647
E-9925
Meeting Information
Meeting: Joint Propulsion Conference and Exhibit
Location: San Diego, CA
Country: United States
Start Date: July 10, 1995
End Date: July 12, 1995
Accession Number
96N11701
Distribution Limits
Public
Copyright
Public Use Permitted.

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