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Reverse annealing in radiation-damaged, silicon solar cells (1979)

Weinberg, I. ; Swartz, C. K.

In: CASI

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Publication Date: 2016-06-07

Description: In order to understand the results in terms of properties of the radiation induced defects, a combination of diffusion length measurements and defect data obtained from Deep Level Transient Spectroscopy were used. The results indicate that the defect at E sub v + 0.30 eV is responsible for the observed reversed annealing. The defect was identified as a boron-oxygen vacancy complex. This identification is a guide to processing efforts aimed at increasing the concentration of these radiation induced defects.

Keywords: ENERGY PRODUCTION AND CONVERSION

Type: Solar Cell High Efficiency and Radiation Damage, 1979; p 161-171

Format: application/pdf

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