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Reverse annealing in radiation-damaged, silicon solar cellsIn order to understand the results in terms of properties of the radiation induced defects, a combination of diffusion length measurements and defect data obtained from Deep Level Transient Spectroscopy were used. The results indicate that the defect at E sub v + 0.30 eV is responsible for the observed reversed annealing. The defect was identified as a boron-oxygen vacancy complex. This identification is a guide to processing efforts aimed at increasing the concentration of these radiation induced defects.
Document ID
19790024489
Acquisition Source
Legacy CDMS
Document Type
Other
Authors
Weinberg, I. (NASA Lewis Research Center Cleveland, OH, United States)
Swartz, C. K. (NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
August 9, 2013
Publication Date
August 1, 1979
Publication Information
Publication: Solar Cell High Efficiency and Radiation Damage, 1979
Subject Category
Energy Production And Conversion
Accession Number
79N32660
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19790024469Collected WorksSolar Cell High Efficiency and Radiation Damage, 1979
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