ISSN:
1662-0356
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Natural Sciences in General
,
Technology
Notes:
Non volatile memory devices have been developed using diphenyl bithiophenederivatives (DPBT) as active layer. The devices, developed with a two terminal vertical structurewhere the spin cast organic layer is sandwiched between two electrodes, behave as bistableconductance switching memory cells; the modification of the electrodes material and of the organiclayer composition introduces significant changes in the electrical behaviour, that give someindications on the molecular origin of the electrical bistability. These data are enriched by in-situspectroscopic experiments
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/42/transtech_doi~10.4028%252Fwww.scientific.net%252FAST.54.458.pdf