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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Advances in science and technology Vol. 54 (Sept. 2008), p. 458-463 
    ISSN: 1662-0356
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Natural Sciences in General , Technology
    Notes: Non volatile memory devices have been developed using diphenyl bithiophenederivatives (DPBT) as active layer. The devices, developed with a two terminal vertical structurewhere the spin cast organic layer is sandwiched between two electrodes, behave as bistableconductance switching memory cells; the modification of the electrodes material and of the organiclayer composition introduces significant changes in the electrical behaviour, that give someindications on the molecular origin of the electrical bistability. These data are enriched by in-situspectroscopic experiments
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Sensors and Actuators A: Physical 31 (1992), S. 245-249 
    ISSN: 0924-4247
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2520-2525 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A spectrum analyzer with a sensitivity better than few pV/Hz in voltage noise measurements and better than 1 fA/Hz in current noise measurements is presented. It has two distinct and independent input amplifiers in parallel, connected to the same device under test (DUT) and is based on the suppression of their uncorrelated noises. The instrument is modular with different front-end amplifiers conceived to optimize the measurement of low impedance or high impedance DUTs. The instrument can cover 8 decades of frequency span, from 10 mHz to 1 MHz. The improvement of sensitivity with respect to a traditional system and the simplicity in the connection and biasing of the DUT makes it perfectly suited to measure ultralow noise levels in semiconductor devices, like trapping noise, shot noise associated with tunneling in fractional quantum Hall systems, 1/f and channel noise in metal–oxide–semiconductor field effect transistors operated below threshold. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5940-5945 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time centroid of the current pulse induced at the anode of a semiconductor drift detector is calculated as a function of the interaction coordinate for arbitrary drifting fields. The effects of its behavior on the determination of the absolute position of the interaction point are studied. For a typical bias condition of the detector, the paper shows that an error up to few hundred micrometers is made in the position reconstruction of the event if the described effects of the induction are not taken into account. The paper also shows that the time shift due to the perturbation of the drifting field caused by the discreteness of the field electrodes, is only of less than 1 ns, and therefore negligible in most applications.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3593-3599 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a method for the measurement of doping fluctuations in high resistivity silicon wafers. Spatial fluctuations of doping are derived from the knowledge of the electrostatic potential in a completely depleted semiconductor bulk. The potential variations are indirectly measured through the analysis of the trajectories of majority carriers drifting within the depleted semiconductor material. Regions of semiconductors up to the full wafer can be investigated. An example of mapping along parallel lines of a floating zone 2 K Ω cm silicon wafer over an area of 0.4×0.8 cm2 is presented. The relative sensitivity of the method is better than 1%.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 5381-5382 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: "Optimum'' digital filtering of the digitized pulses obtained from a radiation detector had been shown to improve the energy resolution with respect to suboptimum analog processing [Rev. Sci. Instrum. 66, 975 (1995)]. This note shows that the improvement does not vanish in very high resolution systems, as it depends on the kind and relative amount of the noises present and not on their absolute value. Using one of the best available silicon detectors, the electronic noise has again been lowered by 18% from 9.6 to 7.9 electrons rms. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 975-981 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes an experimental setup for spectroscopy measurements based on the digital processing of samples obtained by digitizing the signal pulse as it appears at the output of a proper conditioning circuit. The system shares with conventional pulse-height analysis systems the connection to the detector and the preamplifier, but differs from them as it uses an antialiasing filter and a digitizer instead of a shaper and a multichannel analyzer. The implemented algorithm maximizes the signal-to-noise ratio in the estimate of the amplitude of the signal pulse and represents the digital counterpart of the optimum analog processor stated by the theory of the optimum filtering. The system is able to synthesize the best possible filter through the on line measurement of the noises actually present in the experiment, thus leading to the best resolution and allowing a total flexibility in adapting to changeable noise conditions. The performance of the digital system in terms of resolution is investigated and its count rate capability is mentioned. In particular, an improvement in energy resolution of more than 10% has been experimentally achieved with respect to conventional systems based on analog circuitry. All the components of the system are described and, as an example of application, the energy spectrum of 241Am is acquired and reported. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 7583-7585 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a correlation spectrum analyzer, we succeeded in performing direct measurements of the current noise spectra of cadmium telluride (CdTe) diodes, commonly used in γ-ray spectrometers. The current noise spectra have been measured over a wide range of frequencies, from below 1 Hz up to 100 kHz, and for diode operating points from 0 up to 150 V. The device showed linear I–V characteristics in all the bias range with a dynamic resistance of about 2 GΩ. Around the equilibrium condition (0–0.5 V), the white component of the noise spectrum is in agreement with the Johnson noise associated to the device resistance. As the bias is increased up to 150 V, the white noise level is shown to slowly approach the shot noise behavior. The white noise shows a cut-off frequency consistent with the carriers transit time across the device. In all the nonequilibrium conditions, the noise spectra also show a significant 1/f component whose power density increases with the square of the device current. © 2000 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3262-3264 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Noise current analysis, both in time and frequency, is proposed as a means to sense variations of the microscopic conduction in organic light emitting diodes and to track their time evolution. The sensitivity of the technique would allow to correlate the carriers conduction properties with the corresponding changes in the microscopic morphology of the organic layers as obtained with structural or spectroscopic investigations. The method is shown to be very effective also in sensing the initial state and the growth of organic diodes catastrophic degradation in large advance to current monitoring or other techniques. © 2001 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Nuclear Instruments and Methods in Physics Research Section A: 275 (1989), S. 536 
    ISSN: 0168-9002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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