ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
To achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growthrate and high crystalline quality are targeted for AlN films grown on (0001) α-Al2O3 and (0001) 4Hor 6H SiC substrates between 1100 °C and 1750 °C. The precursors used are ammonia NH3 andaluminium chlorides AlClx species formed in situ by action of Cl2 on high purity Al wire. Bothinfluences of temperature and carrier gas on microstructure, crystalline state and growth rate arepresented. Growth rates higher than 190 μm.h-1 have been reached. Thermodynamic calculationswere carried out to understand the chemistry of AlN deposition. AlN layers were characterized bySEM and θ/2θ X-Ray Diffraction. Their epitaxial relationships with substrates were deduced frompole figures obtained by X-Ray diffraction on a texture goniometer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1269.pdf
