ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Measurements of threshold voltage of GaAs FET's (field-effect transistors) show a larger heterogeneity when dislocated rather than free dislocated substrates are used. Therefore, the aim of this study is to find an accurate model for the influence of dislocations on such devices. The model proposed takes into account a cumulative effect of each dislocation located on or around the FET on the value of VT. This effect is merely a function of the distance between the dislocation and the FET. With the use of a computer, the best influence curve has been determined for one wafer. Nevertheless, due to differences in thermal histories, this curve can vary from wafer to wafer. Therefore, it is suggested that, in addition to the average standard deviation of the threshold voltage, it could be accurate to give the influence curve to characterize the substrates.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339715
