Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 3324-3327
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report electrical measurements on structures generated by δ doping the AlGaAs barriers of a GaAs quantum well. These structures are made unique by quantum size effects that occur both in the δ-doped barrier and in the GaAs well. Both the Hall-effect and capacitance-voltage measurements reveal that high-density, 4×1012 cm−2, two-dimensional electron gas forms in the well along with good mobility. We fabricate field-effect transistors with this structure to obtain transconductances of 300 mS/mm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.341513
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