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Self-cleaning effect in partially ionized beam deposition of Cu films (1989)

Yang, G.-R. ; Bai, P. ; Lu, T.-M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 4519-4521

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have shown that high-purity Cu films can be deposited on the Si substrate at room temperature in a conventional vacuum condition using the partially ionized beam technique. The beam contains about 2% of Cu self-ions and a bias potential of 1 kV is applied to the substrate during deposition. By using the secondary ion mass spectrometry technique we show that the Cu/Si interface is free of contaminants such as oxygen, carbon, and hydrogen, despite the fact that no in situ surface cleaning has been performed on the substrate prior to deposition. These phenomena are attributed to the self-cleaning effect induced by the energetic Cu ions bombardment during deposition.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343954

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