ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

A method for doping fluctuations measurement in high resistivity silicon (1992)

Castoldi, A. ; Chinnici, S. ; Gatti, E. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 3593-3599

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: This paper presents a method for the measurement of doping fluctuations in high resistivity silicon wafers. Spatial fluctuations of doping are derived from the knowledge of the electrostatic potential in a completely depleted semiconductor bulk. The potential variations are indirectly measured through the analysis of the trajectories of majority carriers drifting within the depleted semiconductor material. Regions of semiconductors up to the full wafer can be investigated. An example of mapping along parallel lines of a floating zone 2 K Ω cm silicon wafer over an area of 0.4×0.8 cm2 is presented. The relative sensitivity of the method is better than 1%.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351389

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit