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Numerical modeling of transient characteristics of photovoltage in Schottky contacts (1994)

Chen, T. P. ; Ho, S. M. ; Fung, S. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 7624-7626

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Numerical modeling of the transient characteristics of the photovoltage at metal-semiconductor interfaces has been carried out with a simple model in which the contributions of different current transport processes including thermionic emission, tunneling, carrier recombination, and leakage current have been taken into account. The simulation gives the detailed dependence of the transient characteristics on temperature, doping concentration, Schottky barrier height, and leakage resistance. © 1994 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.358522

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