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Reduction of photoscission of σ bonds in polysilanes by fullerene doping (1998)

Ninomiya, Shinsuke ; Ashihara, Yoji ; Nakayama, Yoshikazu

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 3652-3655

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report here an effective reduction of photoscission of σ bonds in polysilanes by C60 doping. The temporal variation of photoluminescence in polysilanes has been measured as a function of a doping amount of C60. The results indicate that the photoscission of σ bonds is related to a photogenerated electron-hole pair rather than a hole or an electron. The energy released when the electron-hole pair recombines nonradiatively is more likely required in addition to the thermal energy to scissor σ bonds. The C60 doping does not affect the activation energy of the photoscission process but decreases the photoscission cross-section. It is also demonstrated that the photoluminescence quenching by the C60 doping is observed for polysilanes not only with aromatic side groups but also with saturated hydrocarbon side groups. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.366584

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