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Ion-channeling analysis of boron clusters in silicon (2001)

Selen, L. J. M. ; Janssen, F. J. J. ; van IJzendoorn, L. J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 4741-4747

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have measured axially channeled Rutherford backscattering spectra of Si1−xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the angle between the incoming beam and the [011] axis and shows two maxima. It is found that Monte Carlo simulations assuming tetragonal distortion reproduce the experimental results. A universal curve was derived which enables determination of the tetragonal distortion from ion-channeling experiments, for a given film thickness. The results are compared with XRD measurements. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1405838

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