Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
90 (2001), S. 5032-5037
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Low energy ion implantation at high doses of boron (〉1015 cm−2) in Si is necessary for the fabrication of ultrashallow junctions but can result in the undesirable presence of boron clusters. Values for the dimensions of the lattice distortions in the implanted Si are obtained by comparing the enhanced dechanneling and the direct scattering peak in the region with clusters in a channeled Rutherford backscattering spectrometry spectrum to those from Monte Carlo calculations on a curved crystal structure. Values of about 0.17 and 65 nm are found for the maximum deformation and the length of the distortions in the crystal, respectively, which implies that the lattice distortions extend significantly outside the layer in which the B clusters are supposed to be present. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1406968
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