Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1011-1013
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The initial reaction of the As-rich c(2×8) GaAs(100) surface with trimethylgallium (TMGa) has been studied by x-ray and ultraviolet photoemission. TMGa was found to chemisorb dissociatively at temperatures below 300 °C with many of the methyl radicals remaining on the surface. Bonding requirements and steric effects limit the saturation coverage to about 0.1 monolayer. At temperatures above 300 °C, TMGa was observed to dissociate on the surface, release all the methyl groups, and deposit Ga up to a self-limiting coverage. This process is most effective at high temperatures. We propose a model for the temperature dependence of the chemisorption which explains and unites many reported observations in the atomic layer epitaxy of GaAs using TMGa and arsine.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101719
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