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  • 1
    Electronic Resource
    Electronic Resource
    Study on the preirradiation polymerization of vinyl monomers
    Amsterdam : Elsevier
    International Journal of Radiation Applications & Instrumentation. Part C, 30 (1987), S. 215-219 
    Details
    ISSN: 1359-0197
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1359-0197(87)90083-X
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  • 2
    Electronic Resource
    Electronic Resource
    A pilot line of EBC system for wood panel surface coating
    Amsterdam : Elsevier
    International Journal of Radiation Applications & Instrumentation. Part C, 33 (1989), S. 469-471 
    Details
    ISSN: 1359-0197
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1359-0197(89)90114-8
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  • 3
    Electronic Resource
    Electronic Resource
    The initiating behavior and stability of peroxide formed during the preirradiation of MMA
    Amsterdam : Elsevier
    Radiation Physics and Chemistry 22 (1983), S. 1029-1037 
    Details
    ISSN: 0146-5724
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0146-5724(83)90171-1
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  • 4
    Electronic Resource
    Electronic Resource
    Radiation processing in China
    Amsterdam : Elsevier
    Radiation Physics and Chemistry 22 (1983), S. 131-134 
    Details
    ISSN: 0146-5724
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0146-5724(83)90199-1
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  • 5
    Electronic Resource
    Electronic Resource
    Compact pulsed molecular beam system for real-time reactive scattering from solid surfaces (1987)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 58 (1987), S. 1014-1026 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a compact system providing the capability of striking a sample surface with a short pulse of reactive gas in an UHV environment and monitoring the evolution of ensuing volatile reaction products. A 300-Hz rotating disk chopper synchronized with a pulsed valve produces molecular beam pulses of 12-μs FWHM at the chopper position. Only one stage of differential pumping separates the pulsed valve chamber from the target chamber with the latter under UHV conditions. The source of the molecular beam, comprised of the chambers containing the pulsed valve and the rotating disk chopper, occupies less than one square meter of floor space. Beam characterization is accomplished by the use of two UHV compatible fast ion gauges located in the target chamber. Reaction products are monitored with microsecond resolution via a differentially pumped quadrupole mass spectrometer located at right angles to the beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139602
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  • 6
    Electronic Resource
    Electronic Resource
    Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1011-1013 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial reaction of the As-rich c(2×8) GaAs(100) surface with trimethylgallium (TMGa) has been studied by x-ray and ultraviolet photoemission. TMGa was found to chemisorb dissociatively at temperatures below 300 °C with many of the methyl radicals remaining on the surface. Bonding requirements and steric effects limit the saturation coverage to about 0.1 monolayer. At temperatures above 300 °C, TMGa was observed to dissociate on the surface, release all the methyl groups, and deposit Ga up to a self-limiting coverage. This process is most effective at high temperatures. We propose a model for the temperature dependence of the chemisorption which explains and unites many reported observations in the atomic layer epitaxy of GaAs using TMGa and arsine.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101719
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  • 7
    Electronic Resource
    Electronic Resource
    Mechanisms of atomic layer epitaxy of GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 716-725 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the surface chemistry of trimethylgallium and diethylgallium chloride on GaAs(100) surfaces as related to the atomic layer epitaxy (ALE) of GaAs. We have observed that during the Ga deposition, the reaction pathway of trimethylgallium changes such that there is significant CH3Ga emission at high Ga coverages. An examination of the Ga coverage dependence reveals that this stoichiometry dependent CH3Ga desorption can lead to self-limiting Ga deposition which is a prerequisite for ALE. Numerical simulation of the reaction shows reasonable agreement with low-pressure ALE growth data. Diethylgallium chloride was found to deposit GaCl on the GaAs surfaces, but with residence time decreasing rapidly with increasing Ga coverage. Again a numerical examination of this stoichiometry dependent phenomenon indicates that it can significantly contribute to the self-limiting Ga deposition. Both systems showed that stoichiometry dependent reactions can be important mechanisms for the atomic layer epitaxy process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353328
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  • 8
    Electronic Resource
    Electronic Resource
    Surface reactions in the chemical vapor deposition of tungsten using WF6 and SiH4 on Al, PtSi, and TiN (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1055-1061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial surface chemical reactions that lead to the chemical vapor deposition (CVD) of tungsten on aluminum, PtSi, and TiN using WF6/SiH4 mixtures have been studied in an ultrahigh vacuum system using x-ray photoemission and mass spectrometry. In all these cases, tungsten deposition can be initiated by initial deposition of a tungsten or silicon seed layer. Aluminum was found to react with WF6 at elevated temperatures to deposit a seed metallic tungsten layer with the formation of volatile aluminum subfluoride. SiH4 then reacted with the tungsten seed layer to provide silicon to sustain the CVD reaction. The silicon atoms in PtSi, similar to the case of a silicon substrate, initiated the deposition process by reacting with WF6. TiN, on the other hand, was decomposed by both WF6 and SiH4 to deposit the necessary tungsten and silicon seed layers, respectively, for the deposition reaction. Deposition reactions on an oxygen-contaminated technical TiN surface were also investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345791
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  • 9
    Electronic Resource
    Electronic Resource
    Doping reaction of PH3 and B2H6 with Si(100) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4032-4037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of phosphine PH3 and diborane B2H6 on Si(100) surfaces was studied by surface analytical techniques in relation to the in situ doping process in the chemical vapor deposition of silicon. Phosphine chemisorbs readily either nondissociatively at room temperature or dissociatively with the formation of silicon–hydrogen bonds at higher temperatures. Hydrogen can be desorbed at temperatures above 400 °C to generate a phosphorus layer. Phosphorus is not effective in shifting the Fermi level until the coverage reaches 2×1014/cm2. A maximum shift of 0.45 eV toward the conduction band was observed. In contrast, diborane has a very small sticking coefficient and the way to deposit boron is to decompose diborane directly on the silicon surface at temperatures above 600 °C. Boron at coverages less than 2×1014/cm2 is very effective in shifting the Fermi level toward the valence band and a maximum change of 0.4 eV was observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336708
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  • 10
    Electronic Resource
    Electronic Resource
    Pyrolysis of trimethylgallium on GaAs(100) surfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1883-1885 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a combination of pulsed molecular beam and time-resolved mass spectrometry to study the kinetics of the pyrolysis of trimethylgallium on GaAs(100) surfaces. We found that CH3 is the major reaction product. Two CH3 desorption channels were observed, with activation energies 37.9±1.6 and 45.0±1.4 kcal/mole. An arsine ambient significantly accelerates the CH3 desorption, but no CH4 was observed. A model for the reaction of trimethylgallium on the GaAs(100) surface is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103224
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