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Reflectance modulator based on tandem Fabry-Perot resonators (1991)

Fritz, I. J. ; Klem, J. F. ; Wendt, J. R.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 59 (1991), S. 753-755

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We present calculations and data on a novel, electrically tunable reflector structure consisting of tandem Fabry–Perot resonators grown as a single epitaxial device. The device consists of three mirrors (quarter-wave stacks of AlGaAs and AlAs) separated by two cavities (one an AlGaAs alloy and the other a GaAs/AlGaAs superlattice) on a GaAs substrate. The tandem cavities produce a characteristic double-dipped reflectance spectrum which can be modulated by tunable electro-optic effects in the superlattice cavity. Our demonstration device has a modulation depth of (approximately-greater-than)10% over a 20 nm bandwidth with 〈4 V of bias swing.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.105332

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