Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1895-1897
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The epitaxial realignment of As-doped polycrystalline silicon layers has been investigated by varying the dimensions of the contact area with the crystalline silicon substrate. Rectangular strips of width in the 0.2–100 μm range and length in the mm range were used. In the 1–100 μm strips the realignment proceeds by the two-dimensional growth of epitaxial columns, while in the 0.2–0.3 μm strips by the one-dimensional growth. The experimental realigned fractions quantitatively follow the trend predicted by the classical model of nucleation and growth in two and one dimension, respectively. The growth kinetics is slowed down in the small width geometry and the thermal budget to realign the films increases.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109535
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