Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 1403-1405
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films implanted with Si and N is reported. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at ∼330 and ∼430 nm were observed from the samples at room temperature with and without annealing. It is found that the PL has a strong dependence on the stabilized N in the Si- and N-coimplanted SiO2 films. The PL may originate from a complex of Si, N, and O. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123564
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