Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3391-3393
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present theoretical and experimental results for the temperature dependence of threshold current in an InGaAsN/GaAs vertical-cavity surface-emitting laser (VCSEL) operating at 1.3 μm under continuous-wave current injection. Using a microscopic many-body laser theory, good agreement with experimental data is obtained. The influence of radiative and nonradiative recombination processes on the threshold current–density is investigated theoretically. Also, comparison to a GaAs/AlGaAs VCSEL emitting at 850 nm is made. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1374484
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