ISSN:
1432-0630
Keywords:
61.16
;
68.65
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have investigated the influence of the native oxide layer on semiconductor surfaces on the imaging properties of the atomic force microscope operated under ambient conditions by using epitaxial In1−x Ga x As layers grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on (001) oriented InP substrates which have been kept under ambient conditions for two years. The thickness and composition of the native oxide layers were studied with ellipsometry and X-ray photoelectron spectroscopy, respectively. Subsequently, the sample surfaces were imaged by means of atomic force microscopy operated in air which revealed terrace structures separated by monoatomic steps. The obtained data were compared with the surface morphology which can be expected from the MOCVD growth process. The results suggest that an accurate study of semiconductor layer growth by atomic force microscopy in air is possible.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00348415
