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Zhong, Lei ; Wang, Zhanguo ; Wan, Shouke ; [et al.]

Springer

Applied physics 55 (1992), S. 313-316

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ISSN: 1432-0630

Keywords: 71.55.Ht ; 61.80.Hg ; 61.70.Yq

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 meV below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00324077

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