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Hydrogen-related donor in silicon crystals grown in a hydrogen atmosphere

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Abstract

Neutron transmutation doped (NTD) silicon crystals grown in a hydrogen atmosphere have been investigated by infrared absorption spectroscopy at a low temperature (10 K). An effective-mass-like donor state HD0/+ has been found at 110.8 meV below the conduction band bottom after rapid thermal annealing (RTA). The HD0/+ formation mechanism after NTD and RTA is briefly discussed, and tentatively attributed to H atoms present in the vicinity of some residual irradiation defects, like a complex of a H atom and a H-saturated vacancy.

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Author notes

  1. Lei Zhong

    Present address: Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, NC, USA

Authors and Affiliations

  1. Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, PR China

    Lei Zhong, Zhanguo Wang & Shouke Wan

  2. Laboratory for Infrared Physics, Chinese Academy of Sciences, 200083, Shanghai, PR China

    Jinbin Zhu

  3. Department of Materials Science and Engineering, North Carolina State University, 27695-7916, Raleigh, NC, USA

    F. Shimura

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  1. Lei Zhong
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  2. Zhanguo Wang
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  3. Shouke Wan
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  4. Jinbin Zhu
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  5. F. Shimura
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Zhong, L., Wang, Z., Wan, S. et al. Hydrogen-related donor in silicon crystals grown in a hydrogen atmosphere. Appl. Phys. A 55, 313–316 (1992). https://doi.org/10.1007/BF00324077

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  • DOI: https://doi.org/10.1007/BF00324077

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