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Metal silicides with energetic pulses (1986)

D'Anna, E. ; Leggieri, G. ; Luches, A. ; [et al.]

Springer

Applied physics 40 (1986), S. 183-190

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ISSN: 1432-0630

Keywords: 68.55 ; 79.20H ; 79.20D

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00617402

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