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Metal silicides with energetic pulses

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Abstract

Samples formed of a thin metal film deposited on silicon single crystal were annealed with electron and laser (ruby and excimer) pulses over a wide range of fluences. From a comparison of the experimental results with the temperature profiles of the irradiated samples, it turns out that suicide formation starts when the metal/silicon interface reaches the lowest eutectic temperature of the binary metal/silicon system. The growth rate of reacted layers is of the order of 1 m/s.

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D'Anna, E., Leggieri, G., Luches, A. et al. Metal silicides with energetic pulses. Appl. Phys. A 40, 183–190 (1986). https://doi.org/10.1007/BF00617402

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