ISSN:
1432-0630
Keywords:
81.10.Jt
;
81.30Bx
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract 4He+ ions backscattering spectrometry and x-ray diffractometry were used to study interactions between PtSi and Pt, NiSi and Ni, PdGe and Pd. Due to the dissociation of the compound the formation of a phase richer in metal was observed to grow at the original compound/metal interface in the temperature range considered, 280–325°C for Pt2Si, 325°C for Ni2Si and 180–260°C for Pd2Ge. The growth kinetics of these new phases (Pt2Si and Pd2Ge) follow a parabolic relation between thickness and annealing time. At a given temperature the growth rate of Pt2Si and Pd2Ge in compound-metal structure is a factor $$\sqrt 2$$ higher than in the usual semiconductor-metal structure.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00885516
