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Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively

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Abstract

4He+ ions backscattering spectrometry and x-ray diffractometry were used to study interactions between PtSi and Pt, NiSi and Ni, PdGe and Pd. Due to the dissociation of the compound the formation of a phase richer in metal was observed to grow at the original compound/metal interface in the temperature range considered, 280–325°C for Pt2Si, 325°C for Ni2Si and 180–260°C for Pd2Ge. The growth kinetics of these new phases (Pt2Si and Pd2Ge) follow a parabolic relation between thickness and annealing time. At a given temperature the growth rate of Pt2Si and Pd2Ge in compound-metal structure is a factor\(\sqrt 2\) higher than in the usual semiconductor-metal structure.

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Authors and Affiliations

  1. Istituto di Fisica, Università di Modena, Via Camp 1 213/A, I-41 100, Modena, Italy

    G. Ottaviani, G. Majni & C. Canali

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  1. G. Ottaviani
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  2. G. Majni
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  3. C. Canali
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Partially supported by Consiglio nazionale delle Ricerche (Italy) and by Commission of the European Communities.

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Ottaviani, G., Majni, G. & Canali, C. Dissociation of PtSi, NiSi and PdGe in presence of Pt, Ni and Pd films, respectively. Appl. Phys. 18, 285–289 (1979). https://doi.org/10.1007/BF00885516

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  • DOI: https://doi.org/10.1007/BF00885516

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