ISSN:
1572-9540
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A small fraction of implanted muons exists as a paramagnetic state (presumably MuBC 0, muonium at the Si—Si bond center) in heavily Sb‐doped Si (n-type, [Sb]\ \simeq 1018\ cm–3). The paramagnetic state is susceptible to illumination both at 10–20 K and 290 K, providing evidence that holes (minority carriers) play an important role in determining the dynamical properties of muonium centers, where change may occur via a process MuBC 0+ h+\to MuBC + followed by charge exchange reaction (or transition Mu+ BC+ e−→ Mu0 T).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1012632211534