Abstract
A small fraction of implanted muons exists as a paramagnetic state (presumably MuBC 0, muonium at the Si—Si bond center) in heavily Sb‐doped Si (n-type, [Sb]\ \simeq 1018\ cm–3). The paramagnetic state is susceptible to illumination both at 10–20 K and 290 K, providing evidence that holes (minority carriers) play an important role in determining the dynamical properties of muonium centers, where change may occur via a process MuBC 0+ h+\to MuBC + followed by charge exchange reaction (or transition Mu+ BC+ e−→ Mu0 T).
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Kadono, R., Macrae, R. & Nagamine, K. Muonium centers in heavily n‐doped Si under illumination: Evidence for Mu–hole interaction. Hyperfine Interactions 105, 327–331 (1997). https://doi.org/10.1023/A:1012632211534
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DOI: https://doi.org/10.1023/A:1012632211534