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Ion implanted silicon-electrolyte interface (1977)

Pham, M. T. ; Hueller, J.

Springer

Journal of applied electrochemistry 7 (1977), S. 531-537

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ISSN: 1572-8838

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology

Notes: Abstract A silicon surface implanted with energetic ions was studied by measurements of the impedance and current-voltage characteristics using the semiconductor—electrolyte (SC-EL) interface. The results are in accordance with the known data from experiments on solid state structures. A great sensitivity to surface damage due to ion implantation was found for the SC-EL system, which thus provides a new tool for characterizing surface properties of Si after ion implantation.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00616765

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