Electronic Resource
Springer
Journal of applied electrochemistry
7 (1977), S. 531-537
ISSN:
1572-8838
Source:
Springer Online Journal Archives 1860-2000
Topics:
Chemistry and Pharmacology
,
Electrical Engineering, Measurement and Control Technology
Notes:
Abstract A silicon surface implanted with energetic ions was studied by measurements of the impedance and current-voltage characteristics using the semiconductor—electrolyte (SC-EL) interface. The results are in accordance with the known data from experiments on solid state structures. A great sensitivity to surface damage due to ion implantation was found for the SC-EL system, which thus provides a new tool for characterizing surface properties of Si after ion implantation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616765
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