ISSN:
1573-9228
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The distribution of the electrophysical and photoelectric properties of diffuse layers of p-GaAs obtained by doping copper using different diffusion modes is investigated. The properties of diffuse layers of p — n structures and volume specimens doped with copper over the whole depth are compared. The behavior of impurity centers is studied in these specimens and their effect on the electrophysical and photoelectric parameters of the material is investigated.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00898911