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Investigation of the electrophysical and photoelectric properties of diffused layers of gallium arsenide obtained by compensation of copper

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Abstract

The distribution of the electrophysical and photoelectric properties of diffuse layers of p-GaAs obtained by doping copper using different diffusion modes is investigated. The properties of diffuse layers of p — n structures and volume specimens doped with copper over the whole depth are compared. The behavior of impurity centers is studied in these specimens and their effect on the electrophysical and photoelectric parameters of the material is investigated.

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Authors and Affiliations

  1. V. D. Kuznetsov Siberian Physicotechnical Institute, Tomsk University, USSR

    M. A. Krivov, E. V. Malisova, É. N. Mel'chenko, M. P. Nikiforova, E. A. Popova, L. K. Tarasova & S. S. Khludkov

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  1. M. A. Krivov
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  2. E. V. Malisova
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  3. É. N. Mel'chenko
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  4. M. P. Nikiforova
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  5. E. A. Popova
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  6. L. K. Tarasova
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  7. S. S. Khludkov
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Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 95–100, October, 1977.

In conclusion we thank I. V. Kamenskii for carrying out the experiments.

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Krivov, M.A., Malisova, E.V., Mel'chenko, É.N. et al. Investigation of the electrophysical and photoelectric properties of diffused layers of gallium arsenide obtained by compensation of copper. Soviet Physics Journal 20, 1333–1337 (1977). https://doi.org/10.1007/BF00898911

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  • DOI: https://doi.org/10.1007/BF00898911

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